GENERAL DESCRIPTION

The MAT01 is a monolithic dual NPN transistor. An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 µV, temperature drift of 0.15 µV/°C, and hFE matching of 0.7. High hFE is provided over a six decade range of collector current, including an exceptional hFE of 590 at a collector current of only 10 nA. The high gain at low collector current makes the MAT01 ideal for use in low power, low level input stages.

FEATURES

Low VOS (VBE match): 40 µV typical, 100 µV maximum

Low TCVOS: 0.5 µV/°C maximum

High hFE: 500 minimum

Excellent hFE linearity from 10 nA to 10 mA

Low noise voltage: 0.23 µV p-p from 0.1 Hz to 10 Hz

High breakdown: 45 V min

APPLICATIONS

Weigh scales

Low noise, op amp, front end

Current mirror and current sink/source

Low noise instrumentation amplifiers

Voltage controlled attenuators

Log amplifiers