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IS42S81600D-7T中文资料
IS42S81600D-7T数据手册规格书PDF详情
OVERVIEW
ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows.
FEATURES
• Clock frequency: 166, 143, 133 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Power supply
VDD VDDQ
IS42S81600D 3.3V 3.3V
IS42S16800D 3.3V 3.3V
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Auto Refresh (CBR)
• Self Refresh with programmable refresh periods
• 4096 refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• Industrial Temperature Availability
• Lead-free Availability
IS42S81600D-7T产品属性
- 类型
描述
- 型号
IS42S81600D-7T
- 制造商
ISSI
- 制造商全称
Integrated Silicon Solution, Inc
- 功能描述
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ISSI |
06+ |
TSOP |
61 |
普通 |
|||
ISSI |
2021+ |
standard |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ISSI |
20+ |
TSOP-54 |
1001 |
就找我吧!--邀您体验愉快问购元件! |
|||
ISSI |
21+ |
TSOP54 |
1975 |
||||
ISSI |
22+ |
N/A |
51800 |
优势价格原装现货提供BOM一站式配单服务 |
|||
ISSI |
21+ |
NA |
10000 |
原装现货假一罚十 |
|||
ISSI |
22+ |
NA |
58735 |
||||
ISSI |
2122+ |
TSOP54 |
28920 |
全新原装正品现货,优势渠道可含税,假一赔十 |
|||
ISSI |
23+ |
54-TSOPII |
1389 |
专业分销产品!原装正品!价格优势! |
|||
ISSI |
1651+ |
? |
8450 |
只做原装进口,假一罚十 |
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Integrated Silicon Solution Inc 北京矽成半导体有限公司
北京矽成半导体有限公司(简称ISSI)成立于1988年,是全球技术领先的集成电路设计企业,2020年被北京君正并购,目前为北京君正集成电路股份有限公司全资子公司。 北京矽成(ISSI)专注于高性能、高品质、高可靠性的各类存储芯片(DRAM, SRAM, Flash等)的研发、设计和销售,另有子品牌LUMISSIL专注于模拟混合信号芯片的研发和销售。产品主要面向全球汽车电子、工业、医疗、网络通信及特定消费类市场。 北京矽成(ISSI)致力于为客户提供更长生命周期的高品质产品。公司通过了ISO 9001、ISO 14001认证,同时合作伙伴全部通过IATF 16949认证。所有车规级产品全部通过A