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位置：首页 > IC中文资料第467页 > 2SK19

2SK19价格

参考价格：￥15.6000

型号：2SK1918STR 品牌：HITACHI 备注：这里有2SK19多少钱，2024年最近7天走势，今日出价，今日竞价，2SK19批发/采购报价，2SK19行情走势销售排行榜，2SK19报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SK19

N-CHANNELSILICONFET

MICRO-ELECTRONICS

Micro Electronics

MICRO-ELECTRONICS
2SK1900

VeryHigh-SpeedSwitchingApplications

Ultrahigh-SpeedSwitchingApplications Features •LowONresistance. •Ultrahigh-speedswitching. •Low-voltagedrive. •Surfacemounttypedevicemakingthefollowingpossible. •Reductioninthenumberofmanufacturingprocessesfor2SK1900-appliedequipment. •Highdensitysurfacemount

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SK1904

VeryHigh-SpeedSwitchingApplications

Features •LowONresistance. •Ultrahigh-speedswitching. •Low-voltagedrive. •Micalesspackagefacilitatingmounting.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SK1905

VeryHigh-SpeedSwitchingApplications

Features •LowONresistance. •Ultrahigh-speedswitching. •Low-voltagedrive. •Micalesspackagefacilitatingeasymounting.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SK1906

VeryHigh-SpeedSwitchingApplications

Ultrahigh-SpeedSwitchingApplications Features ·LowONresistance. ·Ultrahigh-speedswitching. ·Low-voltagedrive. ·Micalesspackagefacilitatingmounting.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SK1907

VeryHigh-SpeedSwitchingApplications

Ultrahigh-SpeedSwitchingApplications Features •LowONresistance. •Ultrahigh-speedswitching. •Low-voltagedrive. •Surfacemounttypedevicemakingthefollowingpossible. •Reductioninthenumberofmanufacturingprocessesfor2SK1907-appliedequipment. •Highdensitysurfacemount

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SK1908

VeryHigh-SpeedSwitchingApplications

Features •LowONresistance. •Ultrahigh-speedswitching. •Low-voltagedrive. •Surfacemounttypedevicemakingthefollowingpossible. •Reductioninthenumberofmanufacturingprocessesfor2SK1908-appliedequipment. •High-densitysurfacemountapplications. •Smallsizeof

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SK1909

VeryHigh-SpeedSwitchingApplications

Ultrahigh-SpeedSwitchingApplications Features •LowONresistance. •Ultrahigh-speedswitching. •Low-voltagedrive. •Surfacemounttypedevicemakingthefollowingpossible. •Reductioninthenumberofmanufacturingprocessesfor2SK1909-appliedequipment. •Highdensitysurfacemount

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SK1916-01R

N-CHANNELSILICONPOWERMOS-FET

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK1917

N-CHANNELSILICONPOWERMOSFET?

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK1917-MR

N-CHANNELSILICONPOWERMOSFET?

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK1920

VeryHigh-SpeedSwitchingApplications

Ultrahigh-SpeedSwitchingApplications Features ·LowONresistance. ·Ultrahigh-speedswitching. ·Low-voltagedrive.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SK1921

VeryHigh-SpeedSwitchingApplications

Features •LowONresistance. •Ultrahigh-speedswitching. •Low-voltagedrive.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SK1922

VeryHigh-SpeedSwitchingApplications

Ultrahigh-SpeedSwitchingApplications Features •LowONresistance. •Ultrahigh-speedswitching. •High-speeddiode(trr=100ns).

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SK1922

FastSwitchingSpeed

DESCRIPTION •DrainCurrentID=2A@TC=25℃ •DrainSourceVoltage:VDSS=600V(Min) •FastSwitchingSpeed APPLICATIONS •Generalpurposepoweramplifier

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SK1923

VeryHigh-SpeedSwitchingApplications

Features •LowONresistance. •Ultrahigh-speedswitching. •High-speeddiode(trr=120ns).

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SK1924

VeryHigh-SpeedSwitchingApplications

Features •LowONresistance. •Ultrahigh-speedswitching. •High-speeddiode(trr=140ns).

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SK1925

VeryHigh-SpeedSwitchingApplications

Features •LowONresistance. •Ultrahigh-speedswitching. •High-speeddiode(trr=150ns).

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SK1928

PowerMOSFET

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK1928-01R

PowerMOSFET

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK1929

HIGHSPEED,HIGHCURRENTSWITCHINGAPPLICATIONS.

Features -LowDrain-SourceONResistance:RDS(ON)=2.5(Typ.) -HighForwardTransferAdmittance:Yfs=2.0S(Typ.) -LowLeakageCurrentIDSS=300μA(Max.)(VDS=720V) -Enhancement-Mode:Vth=1.5-3.5V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK192A

MINIPACKAGESERIES

Application GeneralPurpose> LowNoise HighVoltage HighCurrent HighCurrent LowImpedanceLowNoise(NEW AudioDrive&Out NEW HighB Muting&SW FMRF,MIXOSC AMCONV.FM/AMIF AMFF,CONVIF FM/AMRF,MIXOSC Application GeneralPurpose HighIYfslLowNoise AnalogSW&Ge

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK192A

NCHANNELJUNCTIONTYPE(FMTUNER,VHFBANDAMPLIFIERAPPLICATIONS)

FMTunerApplications VHFBandAmplifierApplications •Highpowergain:GPS=24dB(typ.)(f=100MHz) •Lownoisefigure:NF=1.8dB(typ.)(f=100MHz) •Highforwardtransferadmittance:|Yfs|=7mS(typ.)(f=1kHz)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK193

FieldEffectTransistor

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK1930

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK1930

NCHANNELMOSTYPE(HIGHSPEED,HIGHVOLTAGESWITCHING,CHOPPERREGULATOR,DC-DCCONVERTERANDMOTORDRIVEAPPLICATIONS)

ChopperRegulator,DC−DCConverter,andMotorDriveApplications ●Lowdrain−sourceONresistance:RDS(ON)=3.0Ω(typ.) ●Highforwardtransferadmittance:|Yfs|=2.0S(typ.) ●Lowleakagecurrent:IDSS=300μA(max)(VDS=800V) ●Enhancementmode:Vth=1.5~3.5V(VDS=10V,ID=

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK1931

VRSeriesPowerMOSFET(200V5A)

FEATURES ●Applicableto4Vdrive. ●ThestaticRds(on)issmall. ●Built-inZDforGateProtection. APPLICATION ●DC/DCconverters ●PowersuppliesofDC12-24Vinput ●Productrelatedto ●IntegratedServiceDigitalNetwork

SHINDENGENSHINDENGEN ELECTRIC MANUFACTURING CO.LTD

新电元（上海）电器有限公司

SHINDENGEN
2SK1933

SiliconN-ChannelMOSFET

Features •Lowon-resistance •Highspeedswitching •Nosecondarybreakdown •SuitableforSwitchingregulator Application Highspeedpowerswitching

HitachiHitachi, Ltd.

日立公司

Hitachi
2SK1933

SiliconNChannelMOSFET

Features •Lowon-resistance •Highspeedswitching •Nosecondarybreakdown •Suitableforswitchingregulator Application Highspeedpowerswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK1933-E

SiliconNChannelMOSFET

Features •Lowon-resistance •Highspeedswitching •Nosecondarybreakdown •Suitableforswitchingregulator Application Highspeedpowerswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK1934

SiliconNChannelMOSFET

Features •Lowon–resistance •Highspeedswitching •Nosecondarybreakdown •Suitableforswitchingregulator Application Highspeedpowerswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK1934

SiliconN-ChannelMOSFET

Features •Lowon–resistance •Highspeedswitching •Nosecondarybreakdown •SuitableforSwitchingregulator Application Highspeedpowerswitching

HitachiHitachi, Ltd.

日立公司

Hitachi
2SK1934-E

SiliconNChannelMOSFET

Features •Lowon–resistance •Highspeedswitching •Nosecondarybreakdown •Suitableforswitchingregulator Application Highspeedpowerswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK1936-01

N-CHANNELSILICONPOWERMOS-FET

N-channelMOS-FET500V0,76W10A100W >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -AvalancheProof >Applications -SwitchingRegulators -UPS -DC-DCconverters

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK1936-1

N-channelMOS-FET

N-channelMOS-FET500V0,76W10A100W >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -AvalancheProof >Applications -SwitchingRegulators -UPS -DC-DCconverters

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK1937-01

N-channelMOS-FET

>Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -AvalancheProof >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplifier

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK1938

PowerMOSFET

PowerMOSFET(N-channelenhancementmodepowerMOSFET)

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK1938-01R

PowerMOSFET

PowerMOSFET(N-channelenhancementmodepowerMOSFET)

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK1939-01

N-channelMOS-FET

>Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -AvalancheProof >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplifier

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK1940

N-channelMOS-FET

600V0,75W12A125W >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -AvalancheProof

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK1940-01

N-channelMOS-FET

600V0,75W12A125W >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -AvalancheProof

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK1941

N-channelMOS-FET

>Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -AvalancheProof >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplifier

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK1941

FastSwitchingSpeed

DESCRIPTION •DrainCurrent–ID=16A@TC=25℃ •DrainSourceVoltage-:VDSS=600V(Min) •FastSwitchingSpeed APPLICATIONS •Switchingregulator •UPS •Generalpurposepoweramplifier

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SK1941-01R

N-channelMOS-FET

>Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -AvalancheProof >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplifier

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK1942-01

N-channelMOS-FET

>Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -AvalancheProof >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplifier

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK1943-01

N-channelMOS-FET

Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -AvalancheProof

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK1944-01

N-channelMOS-FET

>Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -AvalancheProof >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplifier

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK1944-01

iscN-ChannelMOSFETTransistor

DESCRIPTION •DrainCurrent–ID=5A@TC=25℃ •DrainSourceVoltage- :VDSS=900V(Min) •FastSwitchingSpeed •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switchingregulator •UPS •DC-DCconverters •Generalpurposepoweramp

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SK1945-01L

N-channelMOS-FET

N-channelMOS-FETFAP-IIASeries >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -AvalancheProof >Applications -SwitchingRegulators -UPS -DC-DCconverters -Gene

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK1945-01LS

N-channelMOS-FET

N-channelMOS-FETFAP-IIASeries >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -AvalancheProof >Applications -SwitchingRegulators -UPS -DC-DCconverters -Gene

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK1946-01MR

N-CHANNELSILICONPOWERMOSFET

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK1947

SiliconN-ChannelMOSFET

Features •Lowon-resistance •Highspeedswitching •LowDriveCurrent •Built-InFastRecoveryDiode(trr=140ns) •SuitableforSwitchingregulator,MotorControl Application Highspeedpowerswitching

HitachiHitachi, Ltd.

日立公司

Hitachi
2SK1947

SiliconNChannelMOSFET

Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Built-infastrecoverydiode(trr=140ns) •Suitableforswitchingregulator,motorcontrol Application Highspeedpowerswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK1947-E

SiliconNChannelMOSFET

Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Built-infastrecoverydiode(trr=140ns) •Suitableforswitchingregulator,motorcontrol Application Highspeedpowerswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK1948

SiliconNChannelMOSFET

SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter,motorcontrol Application Highspeedpowerswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK1948

SiliconN-ChannelMOSFET

SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •LowDriveCurrent •NoSecondaryBreakdown •SuitableforSwitchingregulator,MotorControl Application Highspeedpowerswitching

HitachiHitachi, Ltd.

日立公司

Hitachi
2SK1948-E

SiliconNChannelMOSFET

SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter,motorcontrol Application Highspeedpowerswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK195

FieldEffectTransistor

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK1953

MOSFIELDEFFECTPOWERTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK1954

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK1954isN-channelMOSFieldEffectTransistordesignedforhigh voltageswitchingapplications. FEATURES •LowOn-stateResistance RDS(on)=0.65ΩMAX.(VGS=10V,ID=2.0A) •LowCiss:Ciss=300pFTYP. •Built-inG-SGatePro

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SK19产品属性

  • 类型

    描述

  • 型号

    2SK19

  • 制造商

    Panasonic Industrial Company

  • 功能描述

    TRANSISTOR

2SK19供应商更多...

更新时间：2024-5-27 20:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市益百分电子有限公司
2SK1954-Z-E1
NEC
04+
TO263
2445
全新原装进口自己库存优势
询价
深圳市金芯世纪电子有限公司
2SK1949STL
RENESAS/瑞萨
22+
SOT252
100000
代理渠道/只做原装/可含税
询价
深圳市科芯源微电子有限公司
2SK1958-T1
NEC
24+
SOT23-3
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
鑫勃源（上海北京 青岛）有限公司
2SK1985
FUJ
23+
TO-220F
18000
询价
深圳市芯福林电子科技有限公司
2SK1960
NEC
21+
SOT89
13880
公司只售原装,支持实单
询价
深圳市弘扬芯城科技有限公司
2SK1957-E
RENESAS(瑞萨)/IDT
23+
6000
诚信服务，绝对原装原盘
询价
深圳市博浩通科技有限公司
2SK1958-T1
NEC
23+
SOT323
12000
全新原装优势
询价
深圳市明嘉莱科技有限公司
2SK1950
HITACHI/日立
24+
TO 262 263
158472
明嘉莱只做原装正品现货
询价
深圳市科恒伟业电子有限公司
2SK1959-T1
NEC
1950+
SOT89
4856
只做原装正品现货!或订货假一赔十!
询价
深圳市和悦电子贸易有限公司
2SK1920KTLE
ONSEMI
680
询价

2SK19芯片相关品牌

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2SK19规格书下载地址

2SK19参数引脚图相关

2SK19数据表相关新闻

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