2SK26价格

参考价格:¥1.3128

型号:2SK2615(TE12L,F) 品牌:TOS 备注:这里有2SK26多少钱,2024年最近7天走势,今日出价,今日竞价,2SK26批发/采购报价,2SK26行情走势销售排行榜,2SK26报价。
型号 功能描述 生产厂家&企业 LOGO 操作

SiliconNChannelMOSTypeDC−DCConverter,RelayDriveandMotorDriveApplications

DC−DCConverter,RelayDriveandMotorDriveApplications Lowdrain−sourceON-resistance:RDS(ON)=0.56Ω(typ.) Highforwardtransferadmittance:|Yfs|=7.0S(typ.) Lowleakagecurrent:IDSS=100μA(max)(VDS=500V) Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconNChannelMOSTypeDC−DCConverter,RelayDriveandMotorDriveApplications

DC−DCConverter,RelayDriveandMotorDriveApplications Lowdrain−sourceON-resistance:RDS(ON)=0.56Ω(typ.) Highforwardtransferadmittance:|Yfs|=7.0S(typ.) Lowleakagecurrent:IDSS=100μA(max)(VDS=500V) Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

NCHANNELMOSTYPE(HIGHSPEED,HIGHVOLTAGESWITCHING,SWITCHINGREGULATORAPPLICATIONS)

SwitchingRegulatorApplications ●Lowdrain−sourceON-resistance:RDS(ON)=0.9Ω(typ.) ●Highforwardtransferadmittance:|Yfs|=5.5S(typ.) ●Lowleakagecurrent:IDSS=100μA(max)(VDS=600V) ●Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

NCHANNELMOSTYPE(HIGHSPEED,HIGHVOLTAGESWITCHING,CHOPPERREGULATOR,DC-DCCONVERTERANDMOTORDRIVEAPPLICATIONS)

ChopperRegulator,DC−DCConverterandMotorDriveApplications ●Lowdrain−sourceONresistance:RDS(ON)=3.0Ω(typ.) ●Highforwardtransferadmittance:|Yfs|=2.6S(typ.) ●Lowleakagecurrent:IDSS=100μA(max)(VDS=640V) ●Enhancementmode:Vth=2.0to4.0V(VDS

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

NCHANNELMOSTYPE(HGIHSPEED,HIGHVOLTAGESWITCHIN,SWITCHINGREGULATORAPPLICATIONS)

SwitchingRegulatorApplications 1.Lowdrain−sourceONresistance:RDS(ON)=1.9Ω(typ.) 2.Highforwardtransferadmittance:|Yfs|=3.8S(typ.) 3.Lowleakagecurrent:IDSS=100μA(max)(VDS=640V) 4.Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

NCHANNELMOSTYPE(DC-DCCONVERTER,RELAYDRIVEANDMOTORDRIVEAPPLICATIONS)

DC−DCConverter,RelayDriveandMotorDriveApplications ●Lowdrain−sourceONresistance:RDS(ON)=1.0Ω(typ.) ●Highforwardtransferadmittance:|Yfs|=7.0S(typ.) ●Lowleakagecurrent:IDSS=100μA(max)(VDS=640V) ●Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

DC?묭CConverter,RelayDriveandMotorDrive

DC−DCConverter,RelayDriveandMotorDriveApplications 1.Lowdrain−sourceON-resistance:RDS(ON)=1.2Ω(typ.) 2.Highforwardtransferadmittance:|Yfs|=7.0S(typ.) 3.Lowleakagecurrent:IDSS=100μA(max)(VDS=720V) 4.Enhancement−mode:Vth=2.0to4.0V(VDS=10V,ID

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

DC?묭CConverter,RelayDriveandMotorDrive

DC−DCConverter,RelayDriveandMotorDriveApplications 1.Lowdrain−sourceON-resistance:RDS(ON)=1.2Ω(typ.) 2.Highforwardtransferadmittance:|Yfs|=7.0S(typ.) 3.Lowleakagecurrent:IDSS=100μA(max)(VDS=720V) 4.Enhancement−mode:Vth=2.0to4.0V(VDS=10V,ID

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(PIE-MOSIII)

SwitchingRegulatorApplications,DC-DCConverterandMotorDriveApplications •Lowdrain-sourceON-resistance:RDS(ON)=1.4Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=6.0S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=800V) •Enhancement-model:Vth=2.0to4.0V(VD

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

NCHANNELMOSTYPE(HIGHSPEED,HIGHVOLTAGESWITCHING,CHOPPERREGULATOR,DC-DCCONVERTERANDMOTORDRIVEAPPLICATIONS)

ChopperRegulator,DC-DCConverterandMotorDriveApplications ●4-Vgatedrive ●Lowdrain-sourceON-resistance:RDS(ON)=0.032Ω(typ.) ●Highforwardtransferadmittance:|Yfs|=13S(typ.) ●Lowleakagecurrent:IDSS=100μA(max)(VDS=50V) ●Enhancementmode:Vth=0.8to2.0

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Ultrahigh-SpeedSwitchingApplications

Ultrahigh-SpeedSwitchingApplications Features ·LowON-resistance. ·LowQg.

SANYOSanyo

三洋三洋电机株式会社

SANYO

N-ChannelSiliconMOSFETGeneral-PurposeSwitchingDevice

General-PurposeSwitchingDeviceApplications Features •LowON-resistance. •LowQg. •Ultrahigh-speedswitching.

SANYOSanyo

三洋三洋电机株式会社

SANYO

N-ChannelSiliconMOSFETGeneral-PurposeSwitchingDevice

General-PurposeSwitchingDeviceApplications Features •LowON-resistance. •LowQg. •Ultrahigh-speedswitching. •Micalesspackagefacilitatingmounting.

SANYOSanyo

三洋三洋电机株式会社

SANYO

N-ChannelMOSSiliconFETVeryHigh-SpeedSwitchingApplications

VeryHigh-SpeedSwitchingApplications FeaturesandApplications •LowON-stateresistance. •LowQg

SANYOSanyo

三洋三洋电机株式会社

SANYO

Ultrahigh-SpeedSwitchingApplications

Ultrahigh-SpeedSwitchingApplications Features ·LowON-resistance. ·LowQg.

SANYOSanyo

三洋三洋电机株式会社

SANYO

N-ChannelSiliconMOSFETGeneral-PurposeSwitchingDevice

General-PurposeSwitchingDeviceApplications Features •LowON-resistance. •LowQg. •Ultrahigh-speedswitching.

SANYOSanyo

三洋三洋电机株式会社

SANYO

Ultrahigh-SpeedSwitchingApplications

Features ·LowON-resistance. ·LowQg.

SANYOSanyo

三洋三洋电机株式会社

SANYO

Ultrahigh-SpeedSwitchingApplications

Ultrahigh-SpeedSwitchingApplications Features •LowON-resistance. •LowQg.

SANYOSanyo

三洋三洋电机株式会社

SANYO

N-ChannelSiliconMOSFETGeneral-PurposeSwitchingDevice

General-PurposeSwitchingDeviceApplications Features •LowON-resistance. •LowQg. •Ultrahigh-speedswitching.

SANYOSanyo

三洋三洋电机株式会社

SANYO

Ultrahigh-SpeedSwitchingApplications

Ultrahigh-SpeedSwitchingApplications Features •LowON-resistance. •LowQg.

SANYOSanyo

三洋三洋电机株式会社

SANYO

Ultrahigh-SpeedSwitchingApplications

Ultrahigh-SpeedSwitchingApplications Features ·LowON-resistance. ·LowQg.

SANYOSanyo

三洋三洋电机株式会社

SANYO

Ultrahigh-SpeedSwitchingApplications

Features •LowONresistance. •Smalleramountoftotalgatecharge.

SANYOSanyo

三洋三洋电机株式会社

SANYO

擁낂쳵?잆궧?ㅳ긿?곥꺍?곁뵪

Ultrahigh-SpeedSwitchingApplications Features ·LowON-resistance. ·LowQg.

SANYOSanyo

三洋三洋电机株式会社

SANYO

N-channelMOS-FET

450V0,65Ω10A50W >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconverters -Gene

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-channelMOS-FET

>Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplifier

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-channelMOS-FET

Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplifie

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-channelMOS-FET

Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplifie

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-channelMOS-FET

Features Highspeedswitching Lowon-resistance Nosecondarybreadown Lowdrivingpower Avalanche-proof Applications Switchingregulators UPS(UninterruptiblePowerSupply) DC-DCconverters

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-CHANNELSILICONPOWERMOS-FET

Features Highspeedswitching Lowon-resistance Nosecondarybreakdown Lowdrivingpower Highvoltage VGS=±35VGuarantee Avalanche-proof Applications Switchingregulators UPS DC-DCconverters Generalpurposepoweramplifier

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-channelMOS-FET

500V0,55Ω15A125W >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconverters -Ge

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-CHANNELSILICONPOWERMOSFET

N-CHANNELSILICONPOWERMOSFET FAP-IISSERIES Features Highspeedswitching Lowon-resistance Nosecondarybreakdown Lowdrivingpower Highvoltage VGS=±35VGuarantee Avalanche-proof Applications Switchingregulators UPS DC-DCconverters Generalpurpos

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-channelMOS-FET

>Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplifier

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-channelMOS-FET

>Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplifier

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-channelMOS-FET

>Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplif

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-channelMOS-FET

>Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplif

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-channelMOS-FET

Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-channelMOS-FET

Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-channelMOS-FET

Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-channelMOS-FET

Features Highspeedswitching Lowon-resistance Nosecondarybreadown Lowdrivingpower Avalanche-proof Applications Switchingregulators UPS(UninterruptiblePowerSupply) DC-DCconverters

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-channelMOS-FET

Features Highspeedswitching Lowon-resistance Nosecondarybreadown Lowdrivingpower Avalanche-proof Applications Switchingregulators UPS(UninterruptiblePowerSupply) DC-DCconverters

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-channelMOS-FET

>Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplif

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-channelMOS-FET

>Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplif

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-channelMOS-FET

Features 1.HighSpeedSwitching 2.LowOn-Resistance 3.NoSecondaryBreakdown 4.LowDrivingPower 5.HighVoltage 6.VGS=±30VGuarantee 7.RepetitiveAvalancheRated

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-channelMOS-FET

Features 1.HighSpeedSwitching 2.LowOn-Resistance 3.NoSecondaryBreakdown 4.LowDrivingPower 5.HighVoltage 6.VGS=±30VGuarantee 7.RepetitiveAvalancheRated

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-channelMOS-FET

>Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplif

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-channelMOS-FET

>Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplif

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-channelMOS-FET

>Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplif

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-channelMOS-FET

N-channelMOS-FET 900V2W8A150W >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCc

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-channelMOS-FET

N-channelMOS-FET 900V2W8A150W >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCc

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-channelMOS-FET

N-channelMOS-FET900V2W8A100W >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconv

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-channelMOS-FET

N-channelMOS-FET900V2W8A100W >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconv

FujiFUJI CORPORATION

株式会社FUJI

Fuji

2SK26产品属性

  • 类型

    描述

  • 型号

    2SK26

  • 功能描述

    MOSFET N-CH 500V 10A TO-3PN

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    -

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2024-5-24 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
2016+
TO3P
6000
公司只做原装,假一罚十,可开17%增值税发票!
TOSHIBA
1844+
to3p
9852
只做原装正品假一赔十为客户做到零风险!!
TOSHIBA/东芝
23+
NA/
650
优势代理渠道,原装正品,可全系列订货开增值税票
TOSHIBA
2339+
TO-3P(N)
4326
公司原厂原装现货假一罚十!特价出售!强势库存!
TOSHIBA
21+
TO3P
650
原装现货假一赔十
TOSHIBA/Toshiba Semiconductor/
21+
TO3P
650
优势代理渠道,原装正品,可全系列订货开增值税票
11+
9821
TOSHIBA/东芝
24+
TO3P
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
TOSHIBA/东芝
22+
TO3P
12245
现货,原厂原装假一罚十!
TOS
TO3P
608900
原包原标签100%进口原装常备现货!

2SK26芯片相关品牌

  • ABRACON
  • AD
  • HAMMOND
  • ICST
  • MOLEX7
  • Motorola
  • NIC
  • Sipex
  • STMICROELECTRONICS
  • SUNMATE
  • Temic
  • TRACOPOWER

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