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2SK26价格
参考价格:¥1.3128
型号:2SK2615(TE12L,F) 品牌:TOS 备注:这里有2SK26多少钱,2024年最近7天走势,今日出价,今日竞价,2SK26批发/采购报价,2SK26行情走势销售排行榜,2SK26报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
SiliconNChannelMOSTypeDC−DCConverter,RelayDriveandMotorDriveApplications DC−DCConverter,RelayDriveandMotorDriveApplications Lowdrain−sourceON-resistance:RDS(ON)=0.56Ω(typ.) Highforwardtransferadmittance:|Yfs|=7.0S(typ.) Lowleakagecurrent:IDSS=100μA(max)(VDS=500V) Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID= | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SiliconNChannelMOSTypeDC−DCConverter,RelayDriveandMotorDriveApplications DC−DCConverter,RelayDriveandMotorDriveApplications Lowdrain−sourceON-resistance:RDS(ON)=0.56Ω(typ.) Highforwardtransferadmittance:|Yfs|=7.0S(typ.) Lowleakagecurrent:IDSS=100μA(max)(VDS=500V) Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID= | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
NCHANNELMOSTYPE(HIGHSPEED,HIGHVOLTAGESWITCHING,SWITCHINGREGULATORAPPLICATIONS) SwitchingRegulatorApplications ●Lowdrain−sourceON-resistance:RDS(ON)=0.9Ω(typ.) ●Highforwardtransferadmittance:|Yfs|=5.5S(typ.) ●Lowleakagecurrent:IDSS=100μA(max)(VDS=600V) ●Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
NCHANNELMOSTYPE(HIGHSPEED,HIGHVOLTAGESWITCHING,CHOPPERREGULATOR,DC-DCCONVERTERANDMOTORDRIVEAPPLICATIONS) ChopperRegulator,DC−DCConverterandMotorDriveApplications ●Lowdrain−sourceONresistance:RDS(ON)=3.0Ω(typ.) ●Highforwardtransferadmittance:|Yfs|=2.6S(typ.) ●Lowleakagecurrent:IDSS=100μA(max)(VDS=640V) ●Enhancementmode:Vth=2.0to4.0V(VDS | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
NCHANNELMOSTYPE(HGIHSPEED,HIGHVOLTAGESWITCHIN,SWITCHINGREGULATORAPPLICATIONS) SwitchingRegulatorApplications 1.Lowdrain−sourceONresistance:RDS(ON)=1.9Ω(typ.) 2.Highforwardtransferadmittance:|Yfs|=3.8S(typ.) 3.Lowleakagecurrent:IDSS=100μA(max)(VDS=640V) 4.Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
NCHANNELMOSTYPE(DC-DCCONVERTER,RELAYDRIVEANDMOTORDRIVEAPPLICATIONS) DC−DCConverter,RelayDriveandMotorDriveApplications ●Lowdrain−sourceONresistance:RDS(ON)=1.0Ω(typ.) ●Highforwardtransferadmittance:|Yfs|=7.0S(typ.) ●Lowleakagecurrent:IDSS=100μA(max)(VDS=640V) ●Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
DC?묭CConverter,RelayDriveandMotorDrive DC−DCConverter,RelayDriveandMotorDriveApplications 1.Lowdrain−sourceON-resistance:RDS(ON)=1.2Ω(typ.) 2.Highforwardtransferadmittance:|Yfs|=7.0S(typ.) 3.Lowleakagecurrent:IDSS=100μA(max)(VDS=720V) 4.Enhancement−mode:Vth=2.0to4.0V(VDS=10V,ID | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
DC?묭CConverter,RelayDriveandMotorDrive DC−DCConverter,RelayDriveandMotorDriveApplications 1.Lowdrain−sourceON-resistance:RDS(ON)=1.2Ω(typ.) 2.Highforwardtransferadmittance:|Yfs|=7.0S(typ.) 3.Lowleakagecurrent:IDSS=100μA(max)(VDS=720V) 4.Enhancement−mode:Vth=2.0to4.0V(VDS=10V,ID | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(PIE-MOSIII) SwitchingRegulatorApplications,DC-DCConverterandMotorDriveApplications •Lowdrain-sourceON-resistance:RDS(ON)=1.4Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=6.0S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=800V) •Enhancement-model:Vth=2.0to4.0V(VD | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
NCHANNELMOSTYPE(HIGHSPEED,HIGHVOLTAGESWITCHING,CHOPPERREGULATOR,DC-DCCONVERTERANDMOTORDRIVEAPPLICATIONS) ChopperRegulator,DC-DCConverterandMotorDriveApplications ●4-Vgatedrive ●Lowdrain-sourceON-resistance:RDS(ON)=0.032Ω(typ.) ●Highforwardtransferadmittance:|Yfs|=13S(typ.) ●Lowleakagecurrent:IDSS=100μA(max)(VDS=50V) ●Enhancementmode:Vth=0.8to2.0 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
Ultrahigh-SpeedSwitchingApplications Ultrahigh-SpeedSwitchingApplications Features ·LowON-resistance. ·LowQg. | SANYOSanyo 三洋三洋电机株式会社 | |||
N-ChannelSiliconMOSFETGeneral-PurposeSwitchingDevice General-PurposeSwitchingDeviceApplications Features •LowON-resistance. •LowQg. •Ultrahigh-speedswitching. | SANYOSanyo 三洋三洋电机株式会社 | |||
N-ChannelSiliconMOSFETGeneral-PurposeSwitchingDevice General-PurposeSwitchingDeviceApplications Features •LowON-resistance. •LowQg. •Ultrahigh-speedswitching. •Micalesspackagefacilitatingmounting. | SANYOSanyo 三洋三洋电机株式会社 | |||
N-ChannelMOSSiliconFETVeryHigh-SpeedSwitchingApplications VeryHigh-SpeedSwitchingApplications FeaturesandApplications •LowON-stateresistance. •LowQg | SANYOSanyo 三洋三洋电机株式会社 | |||
Ultrahigh-SpeedSwitchingApplications Ultrahigh-SpeedSwitchingApplications Features ·LowON-resistance. ·LowQg. | SANYOSanyo 三洋三洋电机株式会社 | |||
N-ChannelSiliconMOSFETGeneral-PurposeSwitchingDevice General-PurposeSwitchingDeviceApplications Features •LowON-resistance. •LowQg. •Ultrahigh-speedswitching. | SANYOSanyo 三洋三洋电机株式会社 | |||
Ultrahigh-SpeedSwitchingApplications Features ·LowON-resistance. ·LowQg. | SANYOSanyo 三洋三洋电机株式会社 | |||
Ultrahigh-SpeedSwitchingApplications Ultrahigh-SpeedSwitchingApplications Features •LowON-resistance. •LowQg. | SANYOSanyo 三洋三洋电机株式会社 | |||
N-ChannelSiliconMOSFETGeneral-PurposeSwitchingDevice General-PurposeSwitchingDeviceApplications Features •LowON-resistance. •LowQg. •Ultrahigh-speedswitching. | SANYOSanyo 三洋三洋电机株式会社 | |||
Ultrahigh-SpeedSwitchingApplications Ultrahigh-SpeedSwitchingApplications Features •LowON-resistance. •LowQg. | SANYOSanyo 三洋三洋电机株式会社 | |||
Ultrahigh-SpeedSwitchingApplications Ultrahigh-SpeedSwitchingApplications Features ·LowON-resistance. ·LowQg. | SANYOSanyo 三洋三洋电机株式会社 | |||
Ultrahigh-SpeedSwitchingApplications Features •LowONresistance. •Smalleramountoftotalgatecharge. | SANYOSanyo 三洋三洋电机株式会社 | |||
擁낂쳵?잆궧?ㅳ긿?곥꺍?곁뵪 Ultrahigh-SpeedSwitchingApplications Features ·LowON-resistance. ·LowQg. | SANYOSanyo 三洋三洋电机株式会社 | |||
N-channelMOS-FET 450V0,65Ω10A50W >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconverters -Gene | FujiFUJI CORPORATION 株式会社FUJI | |||
N-channelMOS-FET >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplifier | FujiFUJI CORPORATION 株式会社FUJI | |||
N-channelMOS-FET Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplifie | FujiFUJI CORPORATION 株式会社FUJI | |||
N-channelMOS-FET Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplifie | FujiFUJI CORPORATION 株式会社FUJI | |||
N-channelMOS-FET Features Highspeedswitching Lowon-resistance Nosecondarybreadown Lowdrivingpower Avalanche-proof Applications Switchingregulators UPS(UninterruptiblePowerSupply) DC-DCconverters | FujiFUJI CORPORATION 株式会社FUJI | |||
N-CHANNELSILICONPOWERMOS-FET Features Highspeedswitching Lowon-resistance Nosecondarybreakdown Lowdrivingpower Highvoltage VGS=±35VGuarantee Avalanche-proof Applications Switchingregulators UPS DC-DCconverters Generalpurposepoweramplifier | FujiFUJI CORPORATION 株式会社FUJI | |||
N-channelMOS-FET 500V0,55Ω15A125W >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconverters -Ge | FujiFUJI CORPORATION 株式会社FUJI | |||
N-CHANNELSILICONPOWERMOSFET N-CHANNELSILICONPOWERMOSFET FAP-IISSERIES Features Highspeedswitching Lowon-resistance Nosecondarybreakdown Lowdrivingpower Highvoltage VGS=±35VGuarantee Avalanche-proof Applications Switchingregulators UPS DC-DCconverters Generalpurpos | FujiFUJI CORPORATION 株式会社FUJI | |||
N-channelMOS-FET >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplifier | FujiFUJI CORPORATION 株式会社FUJI | |||
N-channelMOS-FET >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplifier | FujiFUJI CORPORATION 株式会社FUJI | |||
N-channelMOS-FET >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplif | FujiFUJI CORPORATION 株式会社FUJI | |||
N-channelMOS-FET >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplif | FujiFUJI CORPORATION 株式会社FUJI | |||
N-channelMOS-FET Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated | FujiFUJI CORPORATION 株式会社FUJI | |||
N-channelMOS-FET Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated | FujiFUJI CORPORATION 株式会社FUJI | |||
N-channelMOS-FET Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated | FujiFUJI CORPORATION 株式会社FUJI | |||
N-channelMOS-FET Features Highspeedswitching Lowon-resistance Nosecondarybreadown Lowdrivingpower Avalanche-proof Applications Switchingregulators UPS(UninterruptiblePowerSupply) DC-DCconverters | FujiFUJI CORPORATION 株式会社FUJI | |||
N-channelMOS-FET Features Highspeedswitching Lowon-resistance Nosecondarybreadown Lowdrivingpower Avalanche-proof Applications Switchingregulators UPS(UninterruptiblePowerSupply) DC-DCconverters | FujiFUJI CORPORATION 株式会社FUJI | |||
N-channelMOS-FET >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplif | FujiFUJI CORPORATION 株式会社FUJI | |||
N-channelMOS-FET >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplif | FujiFUJI CORPORATION 株式会社FUJI | |||
N-channelMOS-FET Features 1.HighSpeedSwitching 2.LowOn-Resistance 3.NoSecondaryBreakdown 4.LowDrivingPower 5.HighVoltage 6.VGS=±30VGuarantee 7.RepetitiveAvalancheRated | FujiFUJI CORPORATION 株式会社FUJI | |||
N-channelMOS-FET Features 1.HighSpeedSwitching 2.LowOn-Resistance 3.NoSecondaryBreakdown 4.LowDrivingPower 5.HighVoltage 6.VGS=±30VGuarantee 7.RepetitiveAvalancheRated | FujiFUJI CORPORATION 株式会社FUJI | |||
N-channelMOS-FET >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplif | FujiFUJI CORPORATION 株式会社FUJI | |||
N-channelMOS-FET >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplif | FujiFUJI CORPORATION 株式会社FUJI | |||
N-channelMOS-FET >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplif | FujiFUJI CORPORATION 株式会社FUJI | |||
N-channelMOS-FET N-channelMOS-FET 900V2W8A150W >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCc | FujiFUJI CORPORATION 株式会社FUJI | |||
N-channelMOS-FET N-channelMOS-FET 900V2W8A150W >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCc | FujiFUJI CORPORATION 株式会社FUJI | |||
N-channelMOS-FET N-channelMOS-FET900V2W8A100W >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconv | FujiFUJI CORPORATION 株式会社FUJI | |||
N-channelMOS-FET N-channelMOS-FET900V2W8A100W >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconv | FujiFUJI CORPORATION 株式会社FUJI |
2SK26产品属性
- 类型
描述
- 型号
2SK26
- 功能描述
MOSFET N-CH 500V 10A TO-3PN
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
-
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道,金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大)
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TOSHIBA |
2016+ |
TO3P |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
|||
TOSHIBA |
1844+ |
to3p |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
TOSHIBA/东芝 |
23+ |
NA/ |
650 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
TOSHIBA |
2339+ |
TO-3P(N) |
4326 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
TOSHIBA |
21+ |
TO3P |
650 |
原装现货假一赔十 |
|||
TOSHIBA/Toshiba Semiconductor/ |
21+ |
TO3P |
650 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
11+ |
9821 |
||||||
TOSHIBA/东芝 |
24+ |
TO3P |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
TOSHIBA/东芝 |
22+ |
TO3P |
12245 |
现货,原厂原装假一罚十! |
|||
TOS |
TO3P |
608900 |
原包原标签100%进口原装常备现货! |
2SK26规格书下载地址
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- 2SK2552
- 2SK2549
- 2SK2503TL
- 2SK2493
- 2SK2491
- 2SK2463T100
- 2SK2463
- 2SK2440
- 2SK2437
- 2SK2434
- 2SK242
- 2SK2415-Z-E2
- 2SK2414-Z
- 2SK2406
2SK26数据表相关新闻
2SK303L-SOT113SR-V4-TG_UTC代理商
2SK303L-SOT113SR-V4-TG_UTC代理商
2023-2-272SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 SourceContentuid: 2SK3105-T1B-A ManufacturerPartNumber: 2SK3105-T1B-A Brand_Name: Renesas PbfreeCode: Yes RohsCode: Yes PartLifeCycleCode: Obsolete IhsManufacturer: RENESASELECTRONICSCORP P
2021-6-242SK2415-Z-E1-AZ找代理商上深圳百域芯科技
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技 芯片详细信息 ManufacturerPartNumber: 2SK3065 RohsCode: Yes PartLifeCycleCode: Obsolete IhsManufacturer: ROHMCOLTD PackageDescription: , ReachComplianceCode: compliant ECCNCode: EAR99 Manufacturer:
2021-6-242SK2415-Z-E1-AZ找代理商上深圳百域芯科技
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技 芯片详细信息 SourceContentuid: 2SK2415-Z-E1-AZ ManufacturerPartNumber: 2SK2415-Z-E1-AZ Brand_Name: Renesas RohsCode: Yes PartLifeCycleCode: Obsolete IhsManufacturer: RENESASELECTRONICSCORP PackageDescriptio
2021-6-242SK2698
2SK2698,全新原装当天发货或门市自取0755-82732291.
2019-11-142SK1985-01MR
2SK1985-01MR,全新原装当天发货或门市自取0755-82732291.
2019-10-30
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