位置：首页 > IC中文资料第7383页 > AGR21030EF
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
AGR21030EF | 30W,2.110GHz-2.170GHz,N-ChannelE-Mode,LateralMOSFET 文件：371.51 Kbytes Page：9 Pages | TriQuint TriQuint Semiconductor |  |   |
RFPOWERTRANSISTORSLdmosEnhancedTechnology DESCRIPTION TheLET21030CisacommonsourceN-Channelenhancement-modelateralField-EffectRFpowertransistordesignedforbroadbandcommercialandindustrialapplicationsatfrequenciesupto2.1GHz.TheLET21030Cisdesignedforhighgainandbroadbandperformanceoperatingincommonsource | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | | |
RFPOWERFIELDEFFECTTRANSISTORSN-CHANNELENANCEMENT-MODELATERALMOSFETS TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom2.0to2.2GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN–PCS/cell | MotorolaMotorola, Inc 摩托罗拉 |  | | |
LowLossCWDM 文件：351.5 Kbytes Page：2 Pages | OPLINK Oplink Communications, LLC |  | | |
LowLossCWDM 文件：351.5 Kbytes Page：2 Pages | OPLINK Oplink Communications, LLC | | |
AGR21030EF产品属性
- 类型
描述
- 型号
AGR21030EF
- 功能描述
射频MOSFET电源晶体管 RF Transistor
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TRIQUINT |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
|||
TRIQUINT |
SMD |
265209 |
假一罚十原包原标签常备现货! |
||||
AGERE |
2019+ |
SMD |
6992 |
原厂渠道 可含税出货 |
|||
23+ |
N/A |
45990 |
正品授权货源可靠 |
||||
AGERE |
23+ |
SMD |
7300 |
专注配单,只做原装进口现货 |
|||
TRIQUINT |
23+ |
SMD |
17 |
原装正品,假一罚十! |
|||
AGERE |
2021+ |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
||||
TRIQUINT |
23+ |
NA/ |
17 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
TRIQUINT |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
ASI |
22+ |
25000 |
原装现货,价格优惠,假一罚十 |
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AGR21030EF规格书下载地址
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AGR21030EF数据表相关新闻
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AGQ200A12Z，全新原装现货0755-82732291当天发货或门市自取.QQ：1755232575/QQ：1157611585，微信号:87680558.
2021-2-8
DdatasheetPDF页码索引
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