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BC856B价格
参考价格:¥0.1237
型号:BC856B 品牌:Taiwan Semi 备注:这里有BC856B多少钱,2024年最近7天走势,今日出价,今日竞价,BC856B批发/采购报价,BC856B行情走势销售排行榜,BC856B报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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BC856B | PNPgeneralpurposetransistors DESCRIPTION PNPtransistorinaSOT23plasticpackage. NPNcomplements:BC846andBC847. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | ||
BC856B | PNPSURFACEMOUNTSMALLSIGNALTRANSISTOR
| TRSYS Transys Electronics | ||
BC856B | PNPSiliconAFTransistors(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage) Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC846,BC847, BC849,BC850(NPN) | SIEMENS Siemens Ltd | ||
BC856B | SwitchingandAmplifierApplications Features •SwitchingandAmplifierApplications •Suitableforautomaticinsertioninthickandthin-filmcircuits •LowNoise:BC859,BC860 •ComplementtoBC846...BC850 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
BC856B | PNPSURFACEMOUNTSMALLSIGNALTRANSISTOR Features ●IdeallySuitedforAutomaticInsertion ●ComplementaryNPNTypes:BC846–BC848 ●ForSwitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3) ●QualifiedtoAEC-Q101StandardsforH | DIODESDiodes Incorporated 达尔科技 | ||
BC856B | SurfacemountSi-EpitaxialPlanarTransistors SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagin | DiotecDIOTEC 德欧泰克 | ||
BC856B | GeneralPurposeTransistorPNPSilicon GeneralPurposeTransistor PNPSilicon P/bLead(Pb)-Free | WEITRONWEITRON 威堂電子科技 | ||
BC856B | PNPSURFACEMOUNTSMALLSIGNALTRANSISTOR Features •IdeallySuitedforAutomaticInsertion •ComplementaryNPNTypesAvailable(BC846-BC848) •ForSwitchingandAFAmplifierApplications •LeadFree/RoHSCompliant(Note3) | DIODESDiodes Incorporated 达尔科技 | ||
BC856B | NPNgeneralpurposeTransistor FEATURES ●Lowcurrent.(max.100mA). ●Lowvoltage.. APPLICATIONS ●Generalpurposeswitchingandamplification. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | ||
BC856B | 0.2WattsPNPPlastic-EncapsulateTransistors Features ◇Epitaxialplanardieconstruction ◇Surfacedevicetypemounting ◇Moisturesensitivitylevel1 ◇MatteTin(Sn)leadfinishwithNickel(Ni)underplate ◇PbfreeversionandRoHScompliant ◇Greencompound(Halogenfree)withsuffixGon packingcodeandprefixGondatecode | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | ||
BC856B | PNPGENERALPURPOSETRANSISTORS VOLTAGE65/45/30VoltsPOWER225mW FEATURES •GeneralPurposeAmplifierApplications •NPNEpitaxialSilicon,PlanarDesign •CollectorCurrentIC=-100mA •Complimentary(PNP)Devices:BC846/BC847/BC848/BC849Series •IncompliancewithEURoHS2002/95/ECdirectives | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | ||
BC856B | PNPDualGeneralPurposeTransistors PNPDualGeneralPurposeTransistors PbLead(Pb)-Free | WEITRONWEITRON 威堂電子科技 | ||
BC856B | PNPGeneralPurposeTransistor Features ●Ideallysuitedforautomaticinsertion ●ForSwitchingandAFAmplifierApplications | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | ||
BC856B | SMDGeneralPurposeTransistor(PNP) SMDGeneralPurposeTransistor(PNP) Features •PNPSiliconEpitaxialPlanarTransistorfor SwitchingandAmplifierApplications | TAITRON TAITRON | ||
BC856B | PNPgeneralpurposetransistors Generaldescription PNPgeneral-purposetransistorsinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackage. Featuresandbenefits •Lowcurrent(max.100mA) •Lowvoltage(max.65V) •AEC-Q101qualified Applications •General-purposeswitchingandamplification | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | ||
BC856B | PNPTransistor Features ●Ideallysuitedforautomaticinsertion ●ForSwitchingandAFAmplifierApplications | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | ||
BC856B | BC856A FEATURES ●GeneralPurposeTransistorPNPType ●Collectcurrent:-0.1A ●OperatingTemp.:-55°C~+150°C ●RoHScompliantproduct | SECOS SeCoS Halbleitertechnologie GmbH | ||
BC856B | PNPSiliconAFTransistors PNPSiliconAFTransistors •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC846,BC847,BC848,BC849,BC850(NPN) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | ||
BC856B | SURFACEMOUNTPNPSILICONTRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORBC856,BC857andBC858SeriestypesarePNPSiliconTransistorsmanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforgeneralpurposeswitchingandamplifierapplications. MARKINGCODE:PLEASESEEMARKINGCODET | CentralCentral Semiconductor Corp 美国中央半导体 | ||
BC856B | TRANSISTOR(PNP) FEATURES •Ideallysuitedforautomaticinsertion •ForSwitchingandAFAmplifierApplications | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | ||
BC856B | PNPSmallSignalTransistor310mW Features ●LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ●EpoxymeetsUL94V-0flammabilityrating ●MoisureSensitivityLevel1 ●IdeallySuitedforAutomaticInsertion ●150°CJunctionTemperature ●ForSwitchingandAFAmplifierAppli | MCCMicro Commercial Components 美微科美微科半导体公司 | ||
BC856B | GeneralPurposeTransistors GeneralPurposeTransistors PNPSilicon •MoistureSensitivityLevel:1 •ESDRating –HumanBodyModel:>4000V –MachineModel:>400V •Wedeclarethatthematerialofproductcompliancewith RoHSrequirements. | YEASHINYea Shin Technology Co., Ltd 亞昕科技亞昕科技股份有限公司 | ||
BC856B | Plastic-EncapsulateTransistors FEATURES Ideallysuitedforautomaticinsertion ForSwitchingandAFAmplifierApplications | OLITECH Olitech Electronics Co.Ltd | ||
BC856B | PNPSURFACEMOUNTSMALLSIGNALTRANSISTORINSOT23 Features •IdeallySuitedforAutomaticInsertion •ComplementaryPNPTypesAvailable •ForswitchingandAFAmplifier •RoHScompliantpackage | BWTECHBruckewell Technology LTD 布吕克韦尔技术布吕克韦尔技术有限公司 | ||
BC856B | Plastic-EncapsulateTransistors FEATURES Ideallysuitedforautomaticinsertion ForSwitchingandAFAmplifierApplications | HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司 | ||
BC856B | PNPgeneralpurposeTransistor FEATURES ●Lowcurrent.(max.100mA). ●Lowvoltage.. APPLICATIONS ●Generalpurposeswitchingandamplification. | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | ||
BC856B | PNPTransistors ■Features ●Ideallysuitedforautomaticinsertion ●ForSwitchingandAFAmplifierApplications | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | ||
BC856B | GeneralPurposeTransistors Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSC−70/SOT−323whichisdesignedforlowpowersurfacemountapplications. Features •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements; | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
BC856B | Ideallysuitedforautomaticinsertion TRANSISTOR(PNP) FEATURES •Ideallysuitedforautomaticinsertion •ForSwitchingandAFAmplifierApplications | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | ||
BC856B | PNPgeneralpurposeTransistor FEATURES ●Lowcurrent.(max.100mA) ●Lowvoltage.(max.65v) APPLICATIONS ●Generalpurposeswitchingandamplification. | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | ||
BC856B | Lowcurrent.(max.100mA) FEATURES ●Lowcurrent.(max.100mA) ●Lowvoltage.(max.65v) APPLICATIONS ●Generalpurposeswitchingandamplification. | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | ||
BC856B | 65V,100mANPNgeneral-purposetransistors Featuresandbenefits •General-purposetransistors •SMDplasticpackage •Twodifferentgainselections | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | ||
BC856B | SOT-23Plastic-EncapsulateTransistors FEATURES *Ideallysuitedforautomaticinsertion *ForSwitchingandAFAmplifierApplications | UMWUMW 友台友台半导体 | ||
BC856B | 封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:散装 描述:TRANS PNP 65V 0.1A SOT23 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | Yangzhou Yangjie Electronic Technology Co.,Ltd Yangzhou Yangjie Electronic Technology Co.,Ltd | ||
BC856B | PNPSiliconEpitaxialGeneralPurposeTransistors 文件:1.77421 Mbytes Page:12 Pages | FUTUREWAFER FutureWafer Tech Co.,Ltd | ||
BC856B | PNPgeneralpurposeTransistor 文件:247.13 Kbytes Page:6 Pages | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | ||
BC856B | SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | ||
BC856B | Ideallysuitedforautomaticinsertion 文件:518.909 Kbytes Page:6 Pages | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 | ||
BC856B | SMDGeneralPurposePNPTransistors 文件:145.27 Kbytes Page:2 Pages | DiotecDIOTEC 德欧泰克 | ||
BC856B | PNPPlastic-EncapsulateTransistors 文件:1.37311 Mbytes Page:5 Pages | JINGHENG Jinan Jing Heng Electronics Co., Ltd. | ||
BC856B | 200mW,PNPSmallSignalTransistor 文件:323.06 Kbytes Page:6 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | ||
BC856B | PNPSmallSignalTransistor200mW 文件:521.809 Kbytes Page:5 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 | ||
BC856B | SURFACEMOUNTPNPSILICONTRANSISTOR 文件:331.07 Kbytes Page:2 Pages | CentralCentral Semiconductor Corp 美国中央半导体 | ||
BC856B | PNPSmallSignalTransistor310mW 文件:102.17 Kbytes Page:3 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 | ||
BC856B | PNPSURFACEMOUNTSMALLSIGNALTRANSISTOR 文件:119.84 Kbytes Page:4 Pages | DIODESDiodes Incorporated 达尔科技 | ||
BC856B | PNPSmallSignalTransistor310mW 文件:201.1 Kbytes Page:3 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 | ||
BC856B | PNPSiliconAFTransistor 文件:887.44 Kbytes Page:14 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | ||
BC856B | SOT-23BIPOLARTRANSISTORSTRANSISTOR(PNP) 文件:456.6 Kbytes Page:2 Pages | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 | ||
PNPgeneralpurposetransistors DESCRIPTION PNPtransistorinaSOT23plasticpackage. NPNcomplements:BC846andBC847. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
PNPSURFACEMOUNTSMALLSIGNALTRANSISTOR Features ●IdeallySuitedforAutomaticInsertion ●ComplementaryNPNTypes:BC846–BC848 ●ForSwitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3) ●QualifiedtoAEC-Q101StandardsforH | DIODESDiodes Incorporated 达尔科技 | |||
PNPDualGeneralPurposeTransistors PNPDualGeneralPurposeTransistors PbLead(Pb)-Free | WEITRONWEITRON 威堂電子科技 | |||
SOT-363Plastic-EncapsulateTransistors FEATURES eTwotransistorsinonepackage eReducesnumberofcomponentsandboardspace eNomutualinterferencebetweenthetransistors | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
DualGeneralPurposeTransistors DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompli | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
DualGeneralPurposeTransistors(PNPDuals) DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–363/SC–88whichisdesignedforlowpowersurfacemountapplications. | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | |||
DualGeneralPurposeTransistors DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–363/SC–88whichisdesignedforlowpowersurfacemountapplications. | ETLE-Tech Electronics LTD 亞歷電子亞歷電子有限公司 | |||
DualGeneralPurposeTransistors DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. •DeviceMarking: BC856BDW1T1=3B BC857BDW1T1=3F BC857CDW1T1=3G | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
DualGeneralPurposeTransistors DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. •DeviceMarking: BC856BDW1T1=3B BC857BDW1T1=3F BC857CDW1T1=3G | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
DualGeneralPurposeTransistors DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompli | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
DualGeneralPurposeTransistors DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompli | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
DualGeneralPurposeTransistors DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompli | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |
BC856B产品属性
- 类型
描述
- 型号
BC856B
- 功能描述
两极晶体管 - BJT Transistor 200mW
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
On |
23+ |
NA |
1185 |
专做原装正品,假一罚百! |
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CENTRAL |
2021+ |
SOT323 |
83500 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
NXP/恩智浦 |
07+PBFREE1304+ROHS |
SOT-323 |
100 |
进口原装现货询价 |
|||
ON |
0620 |
10000 |
|||||
ON/安森美 |
SOT-723 |
12000 |
原装现货,长期供应,终端账期支持 |
||||
Nexperia(安世) |
23+ |
NA |
26094 |
10年以上分销经验原装进口正品,做服务型企业 |
|||
2023+ |
SOT-23 |
6000 |
全新原装深圳仓库现货有单必成 |
||||
ON/安森美 |
1925+ |
SOT-363 |
120500 |
真实库存!原装特价!实单必成交! |
|||
FAI |
23+ |
540 |
原装现货,欢迎咨询 |
||||
Nexper |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
BC856B规格书下载地址
BC856B参数引脚图相关
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- c3055
- c3000
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- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- bf419
- BDM
- bcm2727
- bcm
- BC857AQ
- BC857AM
- BC857AF
- BC857A
- BC857
- BC856W
- BC856V
- BC856UF
- BC856U
- BC856T
- BC856S
- BC856G
- BC856F
- BC856C
- BC856BW-7-F
- BC856BW,135
- BC856BW,115
- BC856BW
- BC856B-TP
- BC856BT.115
- BC856BT,115
- BC856BT
- BC856BS,115
- BC856BS
- BC856BQ
- BC856BMTF
- BC856BM3T5G
- BC856BM
- BC856BLT3G
- BC856BLT3
- BC856BLT1G
- BC856BF
- BC856BDW1T3G
- BC856BDW1T1G
- BC856B-7-F
- BC856B-7
- BC856B_R1_00001
- BC856B.215
- BC856B,235
- BC856B,215
- BC856AW-7-F
- BC856AW,135
- BC856AW,115
- BC856AW
- BC856A-TP
- BC856AT,115
- BC856A-T
- BC856AT
- BC856AS-7
- BC856AS
- BC856AQ
- BC856ALT1G
- BC856AF
- BC856A-7-F
- BC856A_
- BC856A.215
- BC856A,215
- BC856A
- BC856_1
- BC856.215
- BC856,215
- BC856
- BC850W
- BC850T
- BC850CWH6327XTSA1
- BC850CWH6327
- BC850CW,135
- BC850CW,115
- BC850CW
- BC850CT
- BC850CMTF
- BC850CLT1G
- BC850CE6327HTSA1
- BC850C
- BC850BW
- BC850BT
- BC850B
- BC850AW
- BC850A
- BC850
BC856B数据表相关新闻
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BC856B,215
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