BD545晶体管资料

  • BD545别名:BD545三极管、BD545晶体管、BD545晶体三极管

  • BD545生产厂家:美国得克萨斯仪表公司

  • BD545制作材料:Si-NPN

  • BD545性质:低频或音频放大 (LF)_功率放大 (L)

  • BD545封装形式:直插封装

  • BD545极限工作电压:40V

  • BD545最大电流允许值:15A

  • BD545最大工作频率:<1MHZ或未知

  • BD545引脚数:3

  • BD545最大耗散功率:85W

  • BD545放大倍数

  • BD545图片代号:B-10

  • BD545vtest:40

  • BD545htest:999900

  • BD545atest:15

  • BD545wtest:85

  • BD545代换 BD545用什么型号代替:BD705,BD743,BD905,3DD69B,

型号 功能描述 生产厂家&企业 LOGO 操作
BD545

NPNSILICONPOWERTRANSISTORS

NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD546Series ●85Wat25°CCaseTemperature ●15AContinuousCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

POINNPower Innovations Ltd

Power Innovations Ltd

POINN
BD545

iscSiliconNPNPowerTransistor

DESCRIPTION •CollectorCurrent-IC=15A •Collector-EmitterBreakdownVoltage- :V(BR)CEO=40V(Min)-BD545;60V(Min)-BD545A 80V(Min)-BD545B;100V(Min)-BD545C •ComplementtoTypeBD546/A/B/C APPLICATIONS •Designedforuseingeneralpurposepoweramplif

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BD545

NPNSILICONPOWERTRANSISTORS

NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD546Series ●85Wat25°CCaseTemperature ●15AContinuousCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
BD545

NPNSILICONPOWERTRANSISTORS

文件:104.33 Kbytes Page:5 Pages

BournsBourns Inc.

伯恩斯(邦士)

Bourns

NPNSILICONPOWERTRANSISTORS

NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD546Series ●85Wat25°CCaseTemperature ●15AContinuousCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

POINNPower Innovations Ltd

Power Innovations Ltd

POINN

iscSiliconNPNPowerTransistor

DESCRIPTION •CollectorCurrent-IC=15A •Collector-EmitterBreakdownVoltage- :V(BR)CEO=40V(Min)-BD545;60V(Min)-BD545A 80V(Min)-BD545B;100V(Min)-BD545C •ComplementtoTypeBD546/A/B/C APPLICATIONS •Designedforuseingeneralpurposepoweramplif

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNSILICONPOWERTRANSISTORS

NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD546Series ●85Wat25°CCaseTemperature ●15AContinuousCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

NPNSILICONPOWERTRANSISTORS

NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD546Series ●85Wat25°CCaseTemperature ●15AContinuousCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

iscSiliconNPNPowerTransistor

DESCRIPTION •CollectorCurrent-IC=15A •Collector-EmitterBreakdownVoltage- :V(BR)CEO=40V(Min)-BD545;60V(Min)-BD545A 80V(Min)-BD545B;100V(Min)-BD545C •ComplementtoTypeBD546/A/B/C APPLICATIONS •Designedforuseingeneralpurposepoweramplif

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNSILICONPOWERTRANSISTORS

NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD546Series ●85Wat25°CCaseTemperature ●15AContinuousCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

POINNPower Innovations Ltd

Power Innovations Ltd

POINN

iscSiliconNPNPowerTransistor

DESCRIPTION •CollectorCurrent-IC=15A •Collector-EmitterBreakdownVoltage- :V(BR)CEO=40V(Min)-BD545;60V(Min)-BD545A 80V(Min)-BD545B;100V(Min)-BD545C •ComplementtoTypeBD546/A/B/C APPLICATIONS •Designedforuseingeneralpurposepoweramplif

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNSILICONPOWERTRANSISTORS

NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD546Series ●85Wat25°CCaseTemperature ●15AContinuousCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

POINNPower Innovations Ltd

Power Innovations Ltd

POINN

NPNSILICONPOWERTRANSISTORS

NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD546Series ●85Wat25°CCaseTemperature ●15AContinuousCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

DesignedforComplementaryUsewiththeBD546Series

NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD546Series ●85Wat25°CCaseTemperature ●15AContinuousCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

BournsBourns Inc.

伯恩斯(邦士)

Bourns

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

VOLTAGE40to200VoltsCURRENT5Amperes FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity •Foruseinlow

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

VOLTAGE40to200VoltsCURRENT5Amperes FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity •Foruseinlow

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

VOLTAGE40to200Volts CURRENT5Amperes FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity •Foruseinl

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

SiliconSemiconductorintegratedcircuits

文件:156.18 Kbytes Page:5 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Class-DSpeakerAmplifierforDigitalInput

文件:694.42 Kbytes Page:35 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Class-DSpeakerAmplifierforDigitalInput

文件:694.42 Kbytes Page:35 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

ClassDSpeakerAmplifierforDigitalInput

文件:1.34313 Mbytes Page:55 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

ClassDSpeakerAmplifierforDigitalInput

文件:1.34313 Mbytes Page:55 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

NPNSILICONPOWERTRANSISTORS

文件:104.33 Kbytes Page:5 Pages

BournsBourns Inc.

伯恩斯(邦士)

Bourns

NPNSILICONPOWERTRANSISTORS

文件:104.33 Kbytes Page:5 Pages

BournsBourns Inc.

伯恩斯(邦士)

Bourns

封装/外壳:TO-218-3 包装:管件 描述:TRANS NPN 80V 15A SOT93 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

BournsBourns Inc.

伯恩斯(邦士)

Bourns

NPNSILICONPOWERTRANSISTORS

文件:104.33 Kbytes Page:5 Pages

BournsBourns Inc.

伯恩斯(邦士)

Bourns

封装/外壳:TO-218-3 包装:卷带(TR) 描述:TRANS NPN DARL 100V 15A SOT93 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

BournsBourns Inc.

伯恩斯(邦士)

Bourns

5.0ASCHOTTKYBARRIERDIODE

文件:146.78 Kbytes Page:2 Pages

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

ZSELEC

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

文件:79.34 Kbytes Page:2 Pages

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

MonolithicPrecision,LowDriftFET-InputOpAmp

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

DOLBY-BNOISEPROCESSOR

文件:974.5 Kbytes Page:20 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

545providesthefollowingproductcharacteristics

文件:79.47 Kbytes Page:3 Pages

HENKELHenkel Korea Limited.

韩国汉高

HENKEL

GaAsMMICSPDTSWITCH,DC-3GHz

文件:199.85 Kbytes Page:6 Pages

Hittite

HITTITE

Hittite

TO-8CASCADABLEAMPLIFIERS

文件:176.97 Kbytes Page:2 Pages

TELEDYNE

TELEDYNE

TELEDYNE

BD545产品属性

  • 类型

    描述

  • 型号

    BD545

  • 功能描述

    两极晶体管 - BJT 70W NPN Silicon

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2024-5-24 17:18:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM/罗姆
23+
QFN
90000
只做原厂渠道价格优势可提供技术支持
ROHM/罗姆
2023+
HTSSOP28
1972
十五年行业诚信经营,专注全新正品
ROHM
2020+
HTSSOP-
10000
百分百原装正品 真实公司现货库存 本公司只做原装 可
ROHM/罗姆
VQFN32
4816
优势代理渠道,原装正品,可全系列订货开增值税票
Rohm
23+
NA
10726
专做原装正品,假一罚百!
ROHM
12+
QFN
1100
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Rohm Semiconductor
21+
28VSSOP
13880
公司只售原装,支持实单
ROHM/罗姆
21+
HTSSOP28
6000
全新原装 公司现货
PANJIT
22+23+
TO-252(DPAK)
21623
绝对原装正品全新进口深圳现货
ROHM/罗姆
22+
HTSSOP28
12245
现货,原厂原装假一罚十!

BD545芯片相关品牌

  • AMPHENOL
  • CK-COMPONENTS
  • DDK
  • GLENAIR
  • MACOM
  • Mitsubishi
  • MOLEX6
  • Panasonic
  • POWERDYNAMICS
  • RHOMBUS-IND
  • TELEDYNE
  • YAMAICHI

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