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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BVSS123LT1G | PowerMOSFET170mAmps,100Volts PowerMOSFET170mAmps,100Volts N−ChannelSOT−23 Features •Pb−FreePackagesareAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  |   |
TMOSFETTransistor(N-Channel) TMOSFETTransistor N–Channel | MotorolaMotorola, Inc 摩托罗拉 |  | | |
PowerMOSFET170mAmps,100Volts PowerMOSFET170mAmps,100Volts N−ChannelSOT−23 Features •Pb−FreePackagesareAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
PowerMOSFET170mAmps,100Volts PowerMOSFET170mAmps,100Volts N−ChannelSOT−23 Features •Pb−FreePackagesareAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
PowerMOSFET170mAmps,100Volts PowerMOSFET170mAmps,100Volts N−ChannelSOT−23 Features •Pb−FreePackagesareAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
PowerMOSFET170mAmps,100Volts PowerMOSFET170mAmps,100Volts N−ChannelSOT−23 Features •Pb−FreePackagesareAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
BVSS123LT1G产品属性
- 类型
描述
- 型号
BVSS123LT1G
- 功能描述
MOSFET NFET 100V 170MA 6OH
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
23+ |
SOT23-3 |
200000 |
有挂就有货,只做原装免费送样-可BOM配单 |
|||
原厂原包 |
2022+ |
原装 |
38560 |
原装进口现货,工厂客户可以放款。17377264928微信同 |
|||
ruichips |
2023+ |
SOT-23 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
ON/安森美 |
2102+ |
SOT23-3 |
6854 |
只做原厂原装正品假一赔十! |
|||
23+ |
N/A |
64910 |
正品授权货源可靠 |
||||
ON/安森美 |
23+ |
SOT-23 |
50000 |
原装正品 支持实单 |
|||
onsemi |
23/22+ |
NA |
9000 |
代理渠道.实单必成 |
|||
ON/安森美 |
22+ |
SOT-23 |
9600 |
原装现货,优势供应,支持实单! |
|||
ON |
新批次 |
SOT-23 |
4326 |
||||
ON |
22+ |
SOT-23 |
18000 |
市场最低 原装现货 假一罚百 可开原型号 |
BVSS123LT1G芯片相关品牌
BVSS123LT1G规格书下载地址
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DdatasheetPDF页码索引
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