N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,42A,RDS(ON)=18mΩ@VGS=4.5V. RDS(ON)=25mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

SWITCH-MODETRANSFORMERGUIDE

CONSUMERPRODUCTS PulseoffersacompleterangeofSwitch-ModeTransformersinvarioustechnologies(slot,layerandtripleinsulationwire)usedforpowersuppliesintelevision,set-topboxes,satellitereceivers,DVDplayers,telephonechargers,andwhitegoods.Pulsealsooffersanewrangeo

CustomerSpecification

Construction 1)Conductor a)MaterialTinnedCopper,perASTMB-33andCID-A-A-59551 b)StrandingSolid c)Diameter0.010 2)BraidData a)NominalID1-1/2(1.500) b)AWGofEnds30 c)NumberofCarriers48 d)NominalPercentCoverage92 e)TotalNumberofEnds576 f)Approx.Equiv.AWG

T-1SubminiatureLamps

T-1¾WireLead T-1¾MiniatureFlanged T-1¾MiniatureGrooved T-1¾MidgetScrew T-1¾Bi-Pin

PowerAmplifierApplicationsDriverStageAmplifierApplications

Features ・Hightransitionfrequency:fT=80MHz(typ.)

Nanovoltmeter

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