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FEATURES ■30V,51A,RDS(ON)=10mΩ@VGS=10V. RDS(ON)=17mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

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N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,51A,RDS(ON)=10mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=17mW@VGS=4.5V. RoHScompliant.

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Highlights •maxCache4.0cachingsoftware •RAIDlevels:0,1,5,6,10,50,60,1ADMand10ADM •SupportssimultaneoususeofRAIDandrawdevices(mixedmode) •Fifth-generationZero-MaintenanceCacheProtection(ZMCP) •Upto24nativeSAS/SATAportsinaLP/MD2design •12Gbpsand6

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Description TheABA3100isamonolithicICintendedforuseinapplicationsrequiringhighlinearitysuchas:CellularTelephoneBaseStationDriverAmplifiers,CATVFiberReceiver/DistributionAmplifiers,CATVDropAmplifiers,CATVSettopBoxesandHomeGateway.Suppliedinasurfacemount,16l

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