位置：首页 > IC中文资料第637页 > EN29LV800AB
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5 | EON Eon Silicon Solution Inc. |  |   | |
8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5 | EON Eon Silicon Solution Inc. | | | |
8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5 | EON Eon Silicon Solution Inc. | | | |
8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5 | EON Eon Silicon Solution Inc. | | | |
8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5 | EON Eon Silicon Solution Inc. | | | |
8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5 | EON Eon Silicon Solution Inc. | | | |
8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5 | EON Eon Silicon Solution Inc. | | | |
8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5 | EON Eon Silicon Solution Inc. | | | |
8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5 | EON Eon Silicon Solution Inc. | | | |
8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5 | EON Eon Silicon Solution Inc. | | | |
8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5 | EON Eon Silicon Solution Inc. | | | |
8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5 | EON Eon Silicon Solution Inc. | | | |
8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5 | EON Eon Silicon Solution Inc. | | | |
8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5 | EON Eon Silicon Solution Inc. | | | |
8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5 | EON Eon Silicon Solution Inc. | | | |
8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5 | EON Eon Silicon Solution Inc. | | | |
8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5 | EON Eon Silicon Solution Inc. | | | |
8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5 | EON Eon Silicon Solution Inc. | | | |
8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5 | EON Eon Silicon Solution Inc. | | | |
8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5 | EON Eon Silicon Solution Inc. | | | |
8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5 | EON Eon Silicon Solution Inc. | | | |
8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5 | EON Eon Silicon Solution Inc. | | | |
8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5 | EON Eon Silicon Solution Inc. | | | |
8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5 | EON Eon Silicon Solution Inc. | | | |
8M(1Mx8/512Kx16)BIT DESCRIPTION TheMBM29LV800TE/BEarea8M-bit,3.0V-onlyFlashmemoryorganizedas1Mbytesof8bitseachor512Kwordsof16bitseach.TheMBM29LV800TE/BEareofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackage.Thesedevicesaredesignedtobeprogrammedinasystemwithth | FujitsuFujitsū Kabushiki-gaisha 富士通富士通株式会社 |  | | |
8M(1Mx8/512Kx16)BIT DESCRIPTION TheMBM29LV800TE/BEarea8M-bit,3.0V-onlyFlashmemoryorganizedas1Mbytesof8bitseachor512Kwordsof16bitseach.TheMBM29LV800TE/BEareofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackage.Thesedevicesaredesignedtobeprogrammedinasystemwithth | FujitsuFujitsū Kabushiki-gaisha 富士通富士通株式会社 | | | |
8Megabit(1Mx8-Bit/512Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory GENERALDESCRIPTION TheAm29LV800Bisan8Mbit,3.0volt-onlyFlashmemoryorganizedas1,048,576bytesor524,288words.Thedeviceisofferedin48-ballFBGA,44-pinSO,and48-pinTSOPpackages.Theword-widedata(x16)appearsonDQ15–DQ0;thebyte-wide(x8)dataappearsonDQ7–DQ0.Thisdev | AMDAdvanced Micro Devices, Inc. 超威半导体美国超威半导体公司 |  | | |
8Megabit(1Mx8-Bit/512Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory 文件：1.56155 Mbytes Page：49 Pages | AMDAdvanced Micro Devices, Inc. 超威半导体美国超威半导体公司 | | | |
8Megabit(1Mx8-Bit/512Kx16-Bit)CMOS3.0Volt-only,BootSectorFlashMemory-DieRevision2 文件：272.65 Kbytes Page：12 Pages | AMDAdvanced Micro Devices, Inc. 超威半导体美国超威半导体公司 | | |
EN29LV800AB产品属性
- 类型
描述
- 型号
EN29LV800AB
- 制造商
Eon Silicon Solution Inc
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
EON/ESSI |
三年内 |
1983 |
纳立只做原装正品13590203865 |
||||
EON |
23+ |
TSSOP |
20000 |
原厂原装正品现货 |
|||
EON/宜扬 |
23+ |
BGA |
6500 |
只做原装正品现货!或订货假一赔十! |
|||
EON |
23+ |
BGA |
1300 |
优势库存 |
|||
EON |
2020+ |
0415+ |
78 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
EON |
23+ |
TSOP |
5000 |
原装正品,假一罚十 |
|||
EON |
22+23+ |
TSOP |
25642 |
绝对原装正品全新进口深圳现货 |
|||
EON |
415 |
68900 |
原包原标签100%进口原装常备现货! |
||||
EON |
03/04+ |
TSOP/48 |
2700 |
原装现货海量库存欢迎咨询 |
|||
EON/宜扬 |
23+ |
NA/ |
40 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
EN29LV800AB芯片相关品牌
EN29LV800AB规格书下载地址
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EN29LV800AB数据表相关新闻
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製造商:Intel 產品類型:轉換電壓穩壓器 RoHS:詳細資料 安裝風格:SMD/SMT 封裝/外殼:QFN-20 輸出電壓:600mVto6V 輸出電流:1A 輸出數:1Output 最高輸入電壓:6.6V 拓撲學:Buck 輸入電壓最小:2.4V 交換頻率:4MHz 最低工作溫度:-40C 最高工作溫度:+85C 系列:EN53xx
2020-10-27EN25QH32B-104HIP
EN25QH32B-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26EN25QH16-104HIP
EN25QH16-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26EN25Q32C-104HIP
EN25Q32C-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26
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