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型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
FCU360N65S3R0 | MOSFET??Power,N-Channel,SUPERFETIII,EasyDrive650V,10A,360m Description SUPERFETIIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper-junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon-resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
FCU360N65S3R0 | iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
FCU360N65S3R0 | 封装/外壳:TO-251-3 短截引线,IPak 包装:卷带(TR) 描述:MOSFET N-CH 600V IPAK 分立半导体产品 晶体管 - FET,MOSFET - 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
MOSFET??Power,N-Channel,SUPERFETIII,EasyDrive650V,10A,360m Description SUPERFETIIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper-junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon−resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
MOSFET??Power,N-Channel,SUPERFETIII,EasyDrive650V,10A,360m Description SUPERFETIIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper-junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon-resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
MOSFET–Power,N-Channel,SUPERFETIII,EasyDrive650V,10A,360m Description SUPERFETIIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper−junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon−resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD |
22+23+ |
TO251 |
13662 |
绝对原装正品全新进口深圳现货 |
|||
ON |
21+ |
NA |
3000 |
进口原装 假一罚十 现货 |
|||
onsemi |
22+/23+ |
I-PAK |
9800 |
原装进口公司现货假一赔百 |
|||
Fairchild/ON |
22+ |
TO2513 Short Leads IPak TO251A |
9000 |
原厂渠道,现货配单 |
|||
FAIRCHILD/仙童 |
23+ |
TO-251 |
10000 |
公司只做原装正品 |
|||
FAIRCHILD/仙童 |
22+ |
TO251 |
360000 |
进口原装房间现货实库实数 |
|||
FAIRCHILD/仙童 |
21+ |
TO251 |
1510 |
||||
ON-安森美 |
24+25+/26+27+ |
TO-251-3 |
9328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
ONN |
2345+ |
原厂封装 |
10720 |
只做原装优势现货库存 渠道可追溯 |
|||
ON |
21+ |
NA |
3000 |
进口原装 假一罚十 现货 |
FCU360N65S3R0规格书下载地址
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FCU10B60,全新原装当天发货或门市自取0755-82732291.
2019-11-15
DdatasheetPDF页码索引
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