位置：首页 > IC中文资料第5624页 > HY57V641620HGT-P
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HY57V641620HGT-P | 4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 |  |   |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
64MbSynchronousDRAMbasedon1Mx4Bankx16I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
64MbSynchronousDRAMbasedon1Mx4Bankx16I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
64MbSynchronousDRAMbasedon1Mx4Bankx16I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
64MbSynchronousDRAMbasedon1Mx4Bankx16I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | | |
HY57V641620HGT-P产品属性
- 类型
描述
- 型号
HY57V641620HGT-P
- 制造商
HYNIX
- 制造商全称
Hynix Semiconductor
- 功能描述
4 Banks x 1M x 16Bit Synchronous DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HYNIX |
23+ |
NA/ |
192 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
HY |
2016+ |
TSSOP |
2600 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
HY |
21+ |
TSOP |
35200 |
一级代理/放心采购 |
|||
HYNIX |
2020+ |
TSOP-54 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
HY |
23+ |
TSOP |
20000 |
原厂原装正品现货 |
|||
HY |
23+ |
TSSOP |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
HY |
04+ |
TSOP |
106 |
||||
HYNIX |
TSOP |
265209 |
假一罚十原包原标签常备现货! |
||||
HYNIX |
04+ |
TSOP |
1532 |
原包原盒现货可订货价格优势 |
|||
HYNIX |
19+ |
256800 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
HY57V641620HGT-P芯片相关品牌
HY57V641620HGT-P规格书下载地址
HY57V641620HGT-P参数引脚图相关
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HY57V641620HGT-P数据表相关新闻
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2019-12-12HY57V561620FTP-HI公司原装正品现货/随时可以发货
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2019-4-21
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