型号 功能描述 生产厂家&企业 LOGO 操作
HY57V641620HGT-S

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

SK海力士海力士半导体

Hynix

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

SK海力士海力士半导体

Hynix

64MbSynchronousDRAMbasedon1Mx4Bankx16I/O

DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf

HynixHynix Semiconductor

SK海力士海力士半导体

Hynix

64MbSynchronousDRAMbasedon1Mx4Bankx16I/O

DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf

HynixHynix Semiconductor

SK海力士海力士半导体

Hynix

64MbSynchronousDRAMbasedon1Mx4Bankx16I/O

DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf

HynixHynix Semiconductor

SK海力士海力士半导体

Hynix

64MbSynchronousDRAMbasedon1Mx4Bankx16I/O

DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf

HynixHynix Semiconductor

SK海力士海力士半导体

Hynix

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

SK海力士海力士半导体

Hynix

HY57V641620HGT-S产品属性

  • 类型

    描述

  • 型号

    HY57V641620HGT-S

  • 制造商

    HYNIX

  • 制造商全称

    Hynix Semiconductor

  • 功能描述

    4 Banks x 1M x 16Bit Synchronous DRAM

更新时间:2024-6-6 17:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HY
23+
NA
150
航宇科工半导体-中国航天科工集团战略合作伙伴!
HY
6000
面议
19
TSOP
HYNIX
22+
TSOP
2500
强调现货,随时查询!
HYNIX
23+
TSOP
4500
全新原装、诚信经营、公司现货销售
HY
23+
TSOP
65480
HYNIX
21+
TSOP
10000
原装现货假一罚十
HYNIX
2007
TSOP
394
原装现货海量库存欢迎咨询
HYNIX/海力士
21+
TSOP
5000
原装现货/假一赔十/支持第三方检验
HY
13+
SOP
40
普通
HYNIX
0646+
SOP
1250

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