型号 功能描述 生产厂家&企业 LOGO 操作

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-105.5A,RDS(ON)=5.8mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=8.5mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-92A,RDS(ON)=6.0mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.0mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-105.5A,RDS(ON)=5.8mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=8.5mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-105.5A,RDS(ON)=5.8mΩ@VGS=-10V. RDS(ON)=8.5mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-92A,RDS(ON)=6.0mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.0mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS
更新时间:2024-5-28 11:10:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CET/華瑞
21+ROHS
TO-252
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
台湾华瑞
19+
TO252
67803
原厂代理渠道,每一颗芯片都可追溯原厂;
CET/華瑞
TO-252
265209
假一罚十原包原标签常备现货!
CET
2021+
TO-252-2
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
VBSEMI/台湾微碧
23+
TO252
50000
全新原装正品现货,支持订货
CET/華瑞
2022+
TO-252
79999
CET
23+
TO-252
12300
全新原装真实库存含13点增值税票!
CET
2020+
TO-252
10000
公司代理品牌,原装现货超低价清仓!
CET
23+
TO-252
6000
原装正品,支持实单
CET
22+23+
TO252
68158
绝对原装正品现货,全新深圳原装进口现货

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