位置：首页 > IC中文资料第2626页 > MRF19085
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MRF19085 | RFPowerFieldEffectTransistors TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.9to2.0GHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications. •Typical2-CarrierN-CDMAPerformanceforV | MotorolaMotorola, Inc 摩托罗拉 |  |   |
MRF19085 | RFPowerFieldEffectTransistors RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1900to2000MHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications. •Typical2-CarrierN-CDMAPerformanceforVDD=26Volts, | freescaleFreescaleiscreatingasmarter 飞思卡尔 |  | |
RFPowerFieldEffectTransistors RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1900to2000MHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications. •Typical2-CarrierN-CDMAPerformanceforVDD=26Volts, | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
RFPowerFieldEffectTransistors TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.9to2.0GHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications. •Typical2-CarrierN-CDMAPerformanceforV | MotorolaMotorola, Inc 摩托罗拉 | | | |
RFPowerFieldEffectTransistors RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1900to2000MHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications. •Typical2-CarrierN-CDMAPerformanceforVDD=26Volts, | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
RFPowerFieldEffectTransistors TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.9to2.0GHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications. •Typical2-CarrierN-CDMAPerformanceforV | MotorolaMotorola, Inc 摩托罗拉 | | | |
RFPowerFieldEffectTransistors TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.9to2.0GHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications. •Typical2-CarrierN-CDMAPerformanceforV | MotorolaMotorola, Inc 摩托罗拉 | | | |
RFPowerFieldEffectTransistors TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.9to2.0GHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications. •Typical2-CarrierN-CDMAPerformanceforV | MotorolaMotorola, Inc 摩托罗拉 | | | |
封装/外壳：SOT-957A 包装：卷带（TR） 描述：FET RF 65V 1.99GHZ NI-780 分立半导体产品 晶体管 - FET，MOSFET - 射频 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  | | |
封装/外壳：NI-780S 包装：卷带（TR） 描述：FET RF 65V 1.99GHZ NI-780S 分立半导体产品 晶体管 - FET，MOSFET - 射频 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | |
MRF19085产品属性
- 类型
描述
- 型号
MRF19085
- 制造商
Motorola Inc
- 功能描述
MOSFET Transistor, N-Channel, SOT-502A
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA |
02+08 |
3 |
公司优势库存 热卖中! |
||||
MOTOROLA |
23+ |
MODL |
20000 |
原厂原装正品现货 |
|||
MOTOROLA |
22+ |
MODL |
18560 |
假一赔十全新原装现货特价供应工厂客户可放款 |
|||
原装MOT |
2023+ |
NA |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
23+ |
N/A |
38160 |
正品授权货源可靠 |
||||
MOTOROLA |
2022 |
166 |
原厂原装正品,价格超越代理 |
||||
MOT |
04+ |
SMD |
16 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MOT |
2020+ |
SMD |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
MOTOROLA |
19+ |
DIP |
85476 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
|||
MOTOROLA/摩托罗拉 |
SMD |
265209 |
假一罚十原包原标签常备现货! |
MRF19085芯片相关品牌
MRF19085规格书下载地址
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MRF19085数据表相关新闻
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