| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-CHANNEL150V-0.042ohm-40AD2PAKMESHOVERLAY??MOSFET Description ThisPowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY™process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. Features ■Exceptionaldv/dtcapability ■Gatechargeminimized ■Very | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   | |
N-channel150V-0.045廓-40A-D2PAKMESHOVERLAY??PowerMOSFET Description ThisPowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY™process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. Features ■Exceptionaldv/dtcapability ■Gatechargeminimized ■Very | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL150V-0.042ohm-40ATO-220MESHOVERLAY??MOSFET DESCRIPTION ThispowermosMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY™process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.042Ω ■EXTREMELYHIGHdv/dtCAPABILITY ■VERYL | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL150V-0.042ohm-40ATO-247MESHOVERLAY??MOSFET DESCRIPTION ThispowermosMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY™process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.042Ω ■EXTREMELYHIGHdv/dtCAPABILITY ■VERYL | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
2020+ |
TO220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
ST/意法 |
24+ |
TO220 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
ST |
23+ |
TO-220 |
20000 |
原厂原装正品现货 |
|||
ST/意法 |
04+ |
TO-220 |
514 |
||||
ST/意法 |
22+/23+ |
TO-220 |
9800 |
原装进口公司现货假一赔百 |
|||
ST/意法 |
04+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
ST |
20+ |
TO-220 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
TH/韩国太虹 |
2048+ |
TO-220 |
9851 |
只做原装正品现货!或订货假一赔十! |
|||
ST/意法 |
23+ |
TO-220 |
30000 |
全新原装现货,价格优势 |
|||
ST |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
P40NS15芯片相关品牌
P40NS15规格书下载地址
P40NS15参数引脚图相关
- pt1000
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- PIN二极管
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- P40NE03LSTP40NE03L-20
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- P40NE03L,STP40NE03L-20
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P40NS15数据表相关新闻
P3A9606JKZ
P3A9606JKZ
2024-2-22P4SMA10CA
P4SMA10CA
2023-5-15P412W，P413，P413W，P414，P414W，P415，P415W，P421
P412W，P413，P413W，P414，P414W，P415，P415W，P421
2020-3-3P540A，P540A01，P540A02，P540A04，P540C0101，P540C0102，
P540A，P540A01，P540A02，P540A04，P540C0101，P540C0102，
2020-3-2P4010S
P4010S，全新原装当天发货或门市自取0755-82732291.
2019-9-15P35-4304-000-200-模拟杂项
特点·宽带0.5-16GHz的·低插入损耗;4分贝的典型值在8GHz的·衰减0.5dB步进到31.5分贝·开关速度快·通过提高性能的砷化镓过孔P35-4304-000-200是一种高性能砷化镓单片提供6位数字衰减器的衰减步长为0.5dB31.5分贝范围。它是适用于宽带通信，仪器仪表和电子战的使用应用。衰减器是免费0V/-5V或0/-8V信号控制线的应用程序来控制按照下面的真值表。通过修改控制线，实现全衰减范围组合。模具制造，使用建设部0.5mm栅极长度的MESFET制程（S20）。它是完全
2012-12-20
DdatasheetPDF页码索引
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