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SIR价格
参考价格：￥0.0000
型号：SIR-10CH 品牌：Russell 备注：这里有SIR多少钱，2024年最近7天走势，今日出价，今日竞价，SIR批发/采购报价，SIR行情走势销售排行榜，SIR报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SIR | Solid-State Relay - Isolated Description TheSIRSeriesisdesignedforindustrialapplicationsrequiring ruggedreliableoperation.Providesanopticallyisolated,high capacity,solid-stateoutput,withpowerswitchingcapabilityup to20Asteadystate,200Ainrush.ZerovoltageswitchingSIR2 extendsthelifeofanin | LittelfuseLittelfuse Inc. 力特力特公司 |  |   |
N-Channel 100 V (D-S) MOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prim | VishayVishay Siliconix 威世科技 |  | | |
N-Channel 40 V (D-S) MOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •100RgandUIStested •Qgd/Qgsratio | VishayVishay Siliconix 威世科技 | | | |
N-Channel 80 V (D-S) MOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prim | VishayVishay Siliconix 威世科技 | | | |
P-Channel 30 V (D-S) MOSFET FEATURES •TrenchFET®GenIVp-channelpowerMOSFET •100RgandUIStested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Adapterswitch •Loadswitch •Motordrivecontrol •Batterymanagement •Motordrivecontrol | VishayVishay Siliconix 威世科技 | | | |
P-Channel 30 V (D-S) MOSFET FEATURES •TrenchFET®GenIVp-channelpowerMOSFET •100RgandUIStested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Adapterswitch •Loadswitch •Motordrivecontrol •Batterymanagement •Motordrivecontrol | VishayVishay Siliconix 威世科技 | | | |
N-Channel 30 V (D-S) MOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •100RgandUIStested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •HighpowerdensityDC/DC •VRMsandembeddedDC/DC | VishayVishay Siliconix 威世科技 | | | |
N-Channel 20 V (D-S) MOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •LeadershipRDS(ON)minimizespowerloss fromconduction •2.5Vratingsandoperationatlowvoltage gatedrive •100RgandUIStested •Materialcategorization:fordefinitionsofcompliance pleasese | VishayVishay Siliconix 威世科技 | | | |
N-Channel 60 V (D-S) MOSFETs FEATURES •TrenchFET®GenIVpowerMOSFET •VerylowRDS-Qgfigure-of-merit(FOM) •TunedforthelowestRDS-QossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prim | VishayVishay Siliconix 威世科技 | | | |
N-Channel 60 V (D-S) MOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prim | VishayVishay Siliconix 威世科技 | | | |
N-Channel 60 V (D-S) MOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •VerylowRDS-Qgfigureofmerit(FOM) •TunedforthelowestRDS-QossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prim | VishayVishay Siliconix 威世科技 | | | |
N-Channel 60 V (D-S) MOSFETs FEATURES •TrenchFET®GenIVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prim | VishayVishay Siliconix 威世科技 | | | |
Solid-State Relay - Isolated Description TheSIRSeriesisdesignedforindustrialapplicationsrequiring ruggedreliableoperation.Providesanopticallyisolated,high capacity,solid-stateoutput,withpowerswitchingcapabilityup to20Asteadystate,200Ainrush.ZerovoltageswitchingSIR2 extendsthelifeofanin | LittelfuseLittelfuse Inc. 力特力特公司 | | | |
Solid-State Relay - Isolated Description TheSIRSeriesisdesignedforindustrialapplicationsrequiring ruggedreliableoperation.Providesanopticallyisolated,high capacity,solid-stateoutput,withpowerswitchingcapabilityup to20Asteadystate,200Ainrush.ZerovoltageswitchingSIR2 extendsthelifeofanin | LittelfuseLittelfuse Inc. 力特力特公司 | | | |
Solid-State Relay - Isolated Description TheSIRSeriesisdesignedforindustrialapplicationsrequiring ruggedreliableoperation.Providesanopticallyisolated,high capacity,solid-stateoutput,withpowerswitchingcapabilityup to20Asteadystate,200Ainrush.ZerovoltageswitchingSIR2 extendsthelifeofanin | LittelfuseLittelfuse Inc. 力特力特公司 | | | |
Solid-State Relay - Isolated Description TheSIRSeriesisdesignedforindustrialapplicationsrequiring ruggedreliableoperation.Providesanopticallyisolated,high capacity,solid-stateoutput,withpowerswitchingcapabilityup to20Asteadystate,200Ainrush.ZerovoltageswitchingSIR2 extendsthelifeofanin | LittelfuseLittelfuse Inc. 力特力特公司 | | | |
Solid-State Relay - Isolated Description TheSIRSeriesisdesignedforindustrialapplicationsrequiring ruggedreliableoperation.Providesanopticallyisolated,high capacity,solid-stateoutput,withpowerswitchingcapabilityup to20Asteadystate,200Ainrush.ZerovoltageswitchingSIR2 extendsthelifeofanin | LittelfuseLittelfuse Inc. 力特力特公司 | | | |
Solid-State Relay - Isolated Description TheSIRSeriesisdesignedforindustrialapplicationsrequiring ruggedreliableoperation.Providesanopticallyisolated,high capacity,solid-stateoutput,withpowerswitchingcapabilityup to20Asteadystate,200Ainrush.ZerovoltageswitchingSIR2 extendsthelifeofanin | LittelfuseLittelfuse Inc. 力特力特公司 | | | |
Solid-State Relay - Isolated Description TheSIRSeriesisdesignedforindustrialapplicationsrequiring ruggedreliableoperation.Providesanopticallyisolated,high capacity,solid-stateoutput,withpowerswitchingcapabilityup to20Asteadystate,200Ainrush.ZerovoltageswitchingSIR2 extendsthelifeofanin | LittelfuseLittelfuse Inc. 力特力特公司 | | | |
Infrared light emitting diode, top view type TheSIR-320ST3FisaGaAsinfraredlightemittingdiodehousedinclearplastic.Thisdevicehasahighluminousefficiencyanda940nmspectrumsuitableforsilicondetectors.Itissmallandatthesametimehasawideradiationangle,markingitidealforcompactopticalcontrolequipment. Fea | ROHMRohm Semiconductor 罗姆罗姆半导体集团 |  | | |
Infrared light emitting diode, top view type TheSIR-341ST3FisaGaAsinfraredlightemittingdiodehousedinclearplastic. Thisdevicehasahighluminousefficiencyanda940nmpeakwavelengthsuitableforsilicondetectors. Itissmallandatthesametimehasawideradiationangle,markingitidealforcompactopticalcontrolequipm | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
Infrared light emitting diode, top view type TheSIR-34ST3FisaGaAsinfraredlightemittingdiodehousedinclearplastic.Thisdevicehasahighluminousefficiencyanda950nmspectrumsuitableforsilicondetectors.Itissmallandatthesametimehasawideradiationangle,markingitidealforcompactopticalcontrolequipment. Feat | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
N-Channel 30-V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •100UISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •SynchronousRectification •DC/DCPoint-of-Load •Server | VishayVishay Siliconix 威世科技 | | | |
N-Channel 30-V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •100UISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •SynchronousRectification •DC/DCPoint-of-Load •Server | VishayVishay Siliconix 威世科技 | | | |
P-Channel 30 V (D-S) MOSFET FEATURES •ExtendedVGSrange(±25V)foradaptor switchapplications •ExtremelylowRDS(on) •TrenchFET®powerMOSFET •100RgandUIStested •TypicalESDperformance:4000V(HBM) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICAT | VishayVishay Siliconix 威世科技 | | | |
P-Channel 30 V (D-S) MOSFET FEATURES •ExtendedVGSrange(±25V)foradaptor switchapplications •ExtremelylowRDS(on) •TrenchFET®powerMOSFET •100RgandUIStested •TypicalESDperformance:4000V(HBM) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICAT | VishayVishay Siliconix 威世科技 | | | |
N-Channel 20 V (D-S) MOSFET FEATURES •TrenchFET®powerMOSFET •100RgandUIStested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •DC/DCconverter -Notebook -POL | VishayVishay Siliconix 威世科技 | | | |
N-Channel 20 V (D-S) MOSFET FEATURES •TrenchFET®powerMOSFET •100RgandUIStested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •DC/DCconverter -Notebook -POL | VishayVishay Siliconix 威世科技 | | | |
N-Channel 40 V (D-S) MOSFET FEATURES •TrenchFET®powerMOSFET •100RgandUIStested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •SecondarysideDC/DC | VishayVishay Siliconix 威世科技 | | | |
N-Channel 40-V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •QgOptimized •100RgTested •100UISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConversion •Industrial | VishayVishay Siliconix 威世科技 | | | |
N-Channel 40-V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •QgOptimized •100RgTested •100UISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConversion •Industrial | VishayVishay Siliconix 威世科技 | | | |
N-Channel 45 V (D-S) MOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •45VDrain-sourcebreak-downvoltage •TunedforlowQgandQoss •100RgandUIStested •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Highpowerdensit | VishayVishay Siliconix 威世科技 | | | |
N-Channel 60 V (D-S) MOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prim | VishayVishay Siliconix 威世科技 | | | |
N-Channel 60 V (D-S) MOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •VerylowRDS-Qgfigure-of-merit(FOM) •TunedforthelowestRDS-QossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prim | VishayVishay Siliconix 威世科技 | | | |
N-Channel 60 V (D-S) MOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prim | VishayVishay Siliconix 威世科技 | | | |
N-Channel 60 V (D-S) MOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •TunedforthelowestRDS-QossFOM •100RgandUIStested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Primarysideswitch •Synchronousrectification •DC/DCconverter •Moto | VishayVishay Siliconix 威世科技 | | | |
N-Channel 60 V (D-S) MOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •VerylowRDS-Qgfigure-of-merit(FOM) •TunedforthelowestRDS-QossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prim | VishayVishay Siliconix 威世科技 | | | |
N-Channel 60 V (D-S) MOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prim | VishayVishay Siliconix 威世科技 | | | |
N-Channel 30 V (D-S) MOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •100RgandUIStested •Optimizedforhigh-sideswitchinginsynchronousbuckconverters •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •DC/DCconversion •Batteryprotec | VishayVishay Siliconix 威世科技 | | | |
N-Channel 30-V (D-S) MOSFET FEATURES •Halogen-free •TrenchFET®PowerMOSFET •LowThermalResistancePowerPAK®PackagewithLow1.07mmProfile •OptimizedforHigh-SideSynchronousRectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch | VishayVishay Siliconix 威世科技 | | | |
Infrared light emitting diode, top view type TheSIR-505STA47isoptimalfortape-endsensorsinVTR’sandotherequipment.Itcanbedirectlymountedonaprintedcircuitboard. Features 1)φ5mmplasticpackage. 2)Direct-mounttype. 3)Longlifeandhighreliability. Applications VCR’s,Opticalcontrolequipment | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
N-Channel 100 V (D-S) MOSFET FEATURES •TrenchFET®GenVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prima | VishayVishay Siliconix 威世科技 | | | |
N-Channel 100 V (D-S) MOSFET FEATURES •TrenchFET®GenVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prima | VishayVishay Siliconix 威世科技 | | | |
N-Channel 100 V (D-S) MOSFET FEATURES •TrenchFET®GenVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prima | VishayVishay Siliconix 威世科技 | | | |
N-Channel 100 V (D-S) MOSFETs FEATURES •TrenchFET®GenVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prima | VishayVishay Siliconix 威世科技 | | | |
N-Channel 100 V (D-S) MOSFET FEATURES •TrenchFET®GenVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prima | VishayVishay Siliconix 威世科技 | | | |
Infrared light emitting diode, top view type TheSIR-563ST3FisaGaAsinfraredlightemittingdiodehousedinclearplastic. Thisdevicehasahighluminousefficiencyanda940nmpeakwavelengthsuitableforsilicondetectors. Ithasawideradiationangleandisidealforcompactopticalcontrolequipment. Features 1)Highefficiency, | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
Infrared light emitting diode, top view type Infraredlightemittingdiode,topviewtype TheSIR-568ST3Fhastheresponsespeedandluminousoutputnecessaryforimagetransmissioninaudio-visualapplications.Itcansupportalmostalltypesofopticaltransmissionthroughair,includingaudioanddatatransmission.Theluminousoutput | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
Infrared light emitting diode, top view type Infraredlightemittingdiode,topviewtype TheSIR-568ST3Fhastheresponsespeedandluminousoutputnecessaryforimagetransmissioninaudio-visualapplications.Itcansupportalmostalltypesofopticaltransmissionthroughair,includingaudioanddatatransmission.Theluminousoutput | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
Infrared light emitting diode, top view type TheSIR-56ST3FisaGaAsinfraredlightemittingdiodehousedinclearplastic.Thisdevicehasahighluminousefficiencyanda950nmspectrumsuitableforsilicondetectors.Lowcostmakeitanideallightsourceforhouseholdremotecontroldevices. Features 1)Highefficiency,highoutputPO | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
Infrared light emitting diode, top view type TheSIR-56ST3FisaGaAsinfraredlightemittingdiodehousedinclearplastic.Thisdevicehasahighluminousefficiencyanda950nmspectrumsuitableforsilicondetectors.Lowcostmakeitanideallightsourceforhouseholdremotecontroldevices. Features 1)Highefficiency,highoutputPO | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
N-Channel 150 V (D-S) MOSFET FEATURES •TrenchFET®GenVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prima | VishayVishay Siliconix 威世科技 | | | |
N-Channel 150 V (D-S) MOSFET FEATURES •TrenchFET®GenVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prima | VishayVishay Siliconix 威世科技 | | | |
N-Channel 150 V (D-S) MOSFET FEATURES •TrenchFET®GenVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prima | VishayVishay Siliconix 威世科技 | | | |
N-Channel 150 V (D-S) MOSFET FEATURES •TrenchFET®GenVpowerMOSFET •VerylowRDS-Qgfigureofmerit(FOM) •TunedforthelowestRDS-QossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Primarysideswitch •DC/DCconve | VishayVishay Siliconix 威世科技 | | | |
N-Channel 150 V (D-S) MOSFET FEATURES •TrenchFET®GenVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prima | VishayVishay Siliconix 威世科技 | | | |
N-Channel 150 V (D-S) MOSFET FEATURES •TrenchFET®GenVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prima | VishayVishay Siliconix 威世科技 | | | |
N-Channel 150 V (D-S) MOSFET FEATURES •TrenchFET®GenVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prima | VishayVishay Siliconix 威世科技 | | | |
N-Channel 150 V (D-S) MOSFET FEATURES •TrenchFET®GenVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prima | VishayVishay Siliconix 威世科技 | | | |
N-Channel 80 V (D-S) MOSFET FEATURES •TrenchFET®GenVpowerMOSFET •Ultra-lowRDSxQgFOMproduct •OptimizedQgd/Qgsratio •Excellentefficiencyperformancein powersupplies •100RgandUIStested •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS • | VishayVishay Siliconix 威世科技 | | |
SIR产品属性
- 类型
描述
- 型号
SIR
- 制造商
Samtec Inc
- 功能描述
ONE PIECE POWER RIGHT ANGLE ASSEMBLY - Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay Siliconix |
24+ |
PowerPAK? SO-8 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
VISHAY/威世 |
23+ |
QFN-8 |
76000 |
IR英飞凌VISHAY专做 全新原装进口正品假一赔百,可开13 |
|||
MATRIXINDUSTRIES |
24+ |
PowerPAKSO-8 |
157545 |
明嘉莱只做原装正品现货 |
|||
Vishay(威世) |
23+ |
标准封装 |
15048 |
原厂直销,大量现货库存,交期快。价格优,支持账期 |
|||
VISHAY(威世) |
23+ |
QFN-8 |
3022 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
VISHAY |
22+ |
DFN-8 |
6521 |
公司优势品牌:SMSC半磁半导体/ MAXIM美国美信/TI/BB德州仪/器 STC宏晶科技/ATMEL爱特梅尔SONIX松翰NXP恩智浦ST意法半导体FTDI /SILICON /ICPLUS/JRC。 |
|||
SILICONIXVISHAY |
21+ |
NA |
6000 |
只做原装,一定有货,不止网上数量,量多可订货! |
|||
VISHAY |
23+ |
PPAKSO-8 |
10000 |
全新、原装 |
|||
VISHAY |
2020+ |
QFN-8 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
SILICONIXVISHAY |
N/A |
90000 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
SIR芯片相关品牌
SIR规格书下载地址
SIR参数引脚图相关
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- sp3232
- soc
- smd
- sl11
- sk100
- sja1000
- SIS03XE
- SIS03XD
- SIS03XB
- SIS03XA
- SIS03VY
- SIS03VE
- SIS03VD
- SIS03VB
- SIS03VA
- SIS02T
- SIS0100
- SIR4P
- SIR410D
- SIR383C
- SIR383
- SIR333C
- SIR333-A
- SIR333/H19/F51-R11S7440
- SIR323-5
- SIR-320ST3FN
- SIR-320ST3FF
- SIR-320ST3F
- SIR282
- SIR234
- SIR204C
- SIR19-21C/TR8
- SIR172DP-T1-GE3
- SIR172ADP-T1-GE3
- SIR166DP-T1-GE3
- SIR164DP-T1-GE3
- SIR158DP-T1-GE3
- SIR12-21C/TR8
- SIR1-15-L-S-K
- SIR1-10-L-S-K-TR
- SIR-10EH
- SIR-10DH
- SIR-10CH
- SIR10
- SI-QS-SSA-4
- SIQ74
- SIQ73
- SIQ-187BH-C
- SIQ127R
- SIQ126R
- SIQ125R
- SIQ125
- SIQ124R
- SIQ1055
- SIQ1048
- SIQ1040
- SIPC69SN60C3X2SA1
- SIPC26N60C3X1SA5
- SIP90
- SIP8-99
- SIP8-97
- SIP8-95
- SIP8-92
- SIP8-91
- SIP8-89
- SIP8-87
- SIP8-85
- SIP8-82
- SIP-6P-1K
- SIP4282DVP-3-T1-E3
- SIP4282DNP3-T1-GE3
- SIP4282ADNP3-T1GE4
- SIP4280DR-3
- SIP32509DT-T1-GE3
- SIP32508DT-T1-GE3
- SIP32468DB-T2-GE1
- SIP32467DB-T2-GE1
- SIP32462DB-T2-GE1
- SIP32461DB-T2-GE1
- SIP32459DB-T2-GE1
- SIP32458DB-T2-GE1
- SIP32454DB-T2-GE1
- SIP32454DB-T2->
- SIP32453DB-T2-GE1
SIR数据表相关新闻
SIP32433ADN-T1E4电子保险丝
电流阻断电子保险丝简化了设计并最大限度地减少了对外部元器件的需求
2023-3-21SIR402DP-T1-GE3
SIR402DP-T1-GE3
2022-7-1SIP32431DNP3-T1GE4
SIP32431DNP3-T1GE4
2022-5-9SIR462DP
TO-3PF-3MOSFET,1200VMOSFET,WDFN-8SMD/SMT1ChannelN-Channel40VMOSFET,TO-252-3SMD/SMTP-ChannelEnhancement4.5AMOSFET,SMD/SMTP-ChannelAEC-Q101MOSFET,TSSOP-8SMD/SMTEnhancement20VMOSFET
2020-10-9SIR876ADP-T1-GE3
SIR876ADP-T1-GE3
2019-11-29SIP41101-半桥式N通道MOSFET驱动器的越狱前先
特点5-10V栅极驱动欠压锁定分1-栅极驱动器内置自举二极管驱动MOSFET在4.5至30V系统开关频率：250kHz到1MHz同步启用/禁用选项应用多相直流/直流高电流同步降压转换器高频同步降压转换器异步到同步改编移动计算机直流/直流转换器台式电脑直流/直流转换器描述该SiP4
2013-2-25
DdatasheetPDF页码索引
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