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SPA15N60价格
参考价格：￥9.3867
型号：SPA15N60C3 品牌：Infineon 备注：这里有SPA15N60多少钱，2024年最近7天走势，今日出价，今日竞价，SPA15N60批发/采购报价，SPA15N60行情走势销售排行榜，SPA15N60报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   | |
iscN-ChannelMOSFETTransistor •DESCRITION •HighfastswitchingPowerSupply •FEATURES •Drain-sourceon-resistance:RDS(on)≤0.28Ω@10V •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplication | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
CoolMOSTMPowerTransistorFeaturesIntrinsicfast-recoverybodydiode Features •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDECfortargetapplications CoolMOSCFDdesignedfor: •SoftswitchingPWMStages •LCD&CRTTV | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
CoolMOS??PowerTransistor 文件：689.7 Kbytes Page：14 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
CoolMOS??PowerTransistor 文件：689.7 Kbytes Page：14 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
15Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC15N60isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecostumerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypu | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | | |
N-Channel650V(D-S)PowerMOSFET 文件：1.0671 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
15A,600VN-CHANNELPOWERMOSFET 文件：185.37 Kbytes Page：6 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | | |
HighSwitchingSpeed 文件：49.33 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
CoolMOSPowerTransistor 文件：543.38 Kbytes Page：12 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
SPA15N60产品属性
- 类型
描述
- 型号
SPA15N60
- 功能描述
MOSFET COOL MOS N-CH 650V 15A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
17+ |
NA |
6200 |
100%原装正品现货 |
|||
INFINEON |
14+P |
TO-220F |
95 |
库存刚更新加微13425146986 |
|||
Infineon/英飞凌 |
2023+ |
PG-TO220FP |
6000 |
原装正品现货、支持第三方检验、终端BOM表可配单提供 |
|||
INENOI |
20+ |
TO-220 |
1150 |
全新原装,价格优势 |
|||
INFINEO |
2020+ |
TO-220F |
54 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
infineon |
22+ |
35000 |
OEM工厂,中国区10年优质供应商! |
||||
SPA15N60C3 |
22+ |
TO-220 |
32500 |
郑重承诺只做原装进口货 |
|||
INFINEO |
2020+ |
TO-220F |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
Infineon Technologies |
24+ |
PG-TO220-3-31 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
Infineon |
2023 |
6500 |
公司原装现货/支持实单 |
SPA15N60芯片相关品牌
SPA15N60规格书下载地址
SPA15N60参数引脚图相关
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SPA15N60数据表相关新闻
SP8K24-TB
SP8K24-TB
2021-10-20SP706RCU-L
https://hch01.114ic.com/
2020-11-13SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
2019-12-16SPB17N80C3BSZ520N15NS3G特价热销
SPB17N80C3BSZ520N15NS3G电信，供电系统
2019-8-6SPA07N60C3
SPA07N60C3
2019-4-24SPA20N60CFD-CoolMOS功率晶体管
特点•新的革命高电压技术•内在的快速恢复体二极管•极低的反向恢复电荷•超低栅极电荷•至尊的dv/dt的额定•高峰值电流能力•定期雪崩额定•合格的为工业级应用根据JEDEC0）•无铅引脚电镀，符合RoHS标准
2012-11-10
DdatasheetPDF页码索引
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