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SPD02N60S5价格
参考价格：￥2.9906
型号：SPD02N60S5 品牌：INFINEON 备注：这里有SPD02N60S5多少钱，2024年最近7天走势，今日出价，今日竞价，SPD02N60S5批发/采购报价，SPD02N60S5行情走势销售排行榜，SPD02N60S5报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SPD02N60S5 | CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapp | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
SPD02N60S5 | N-ChannelMOSFETTransistor •DESCRITION •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
SPD02N60S5 | PowerMOSFET 文件：1.07863 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
N-ChannelMOSFETTransistor •DESCRITION •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformancean | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-Channel650V(D-S)PowerMOSFET 文件：1.68505 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
PowerMOSFET 文件：1.67706 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-Channel650V(D-S)MOSFET 文件：1.71684 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | |
SPD02N60S5产品属性
- 类型
描述
- 型号
SPD02N60S5
- 功能描述
MOSFET COOL MOS N-CH 600V 1.8A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
22+ |
TO-252 |
79683 |
郑重承诺只做原装进口现货 |
|||
INFINEON/英飞凌 |
TO252 |
7906200 |
|||||
INFINEON |
22+ |
SOT-252 |
255445 |
原装现货库存.价格优势 |
|||
INFINEON |
08+ |
5000 |
普通 |
||||
INENOI |
20+ |
SOT252 |
2000 |
全新原装,价格优势 |
|||
INFIEON |
1318+ |
to-252 |
23568 |
优势现货可17%税 |
|||
Infineon |
18+ |
NA |
3000 |
进口原装正品优势供应QQ3171516190 |
|||
INFINEON/英飞凌 |
2022+ |
SOT-252 |
12888 |
原厂代理 终端免费提供样品 |
|||
INFINEON |
23+ |
TO-252 |
8000 |
原装正品 |
|||
INFINEON |
07+ |
TO-252 |
45000 |
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SPD02N60S5规格书下载地址
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DdatasheetPDF页码索引
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