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SSW价格
参考价格：￥3.8033
型号：SSW-101-01-G-S 品牌：SAMTEC 备注：这里有SSW多少钱，2024年最近7天走势，今日出价，今日竞价，SSW批发/采购报价，SSW行情走势销售排行榜，SSW报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SSW | Box Cover Units for Plug Fuses BoxCoverUnitsForPlugFuses Plugfuseboxcoverunitsprovideasimple,inexpensivewaytoprotectsmallmotorswithEdison-type“T”,“TL”,“TC”,“P”and“W”plugfuses.Boxcoverunitsareeasilyinstalledinstandardelectricalboxes.Byusingfusessizedattheampratingofamotororslig | COOPER 科普斯株洲市科普斯科技有限公司 |  |   |
SSW | Surface Mount Mini Size 2 Pole Snap-acting Switches Features/Benefits •Surfacemountterminations •IP67 •Redundantcontacts •Changeovertime | CK-COMPONENTS C&K Components |  | |
SSW | 包装：散装 描述：FUSE TRON BOX COVER UNIT 电路保护 保险丝座 | Eaton - Bussmann Electrical Division Eaton - Bussmann Electrical Division |  | |
Advanced Power MOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:25μA(Max.)@VDS=800V ■LowRDS(ON):4.688Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
AT90USB1287 (AVR) 64 QFN device (2.7V VCC 5.5V) Overview ThisdocumentdescribestheAT88CK109STK3,whichisadevelopmentkitfortheAT88SA100,AT88SA102,andATSA8810HSCryptoAuthenticationdevices.Thiskitusesamodularapproach.ThedevelopmentkitincludestheAT88MicrobaseboardandtheAT88CK109BK3CryptoAuthenticationdaughterboard | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 |  | | |
ADS78/8505EVM Users Guide Features ·Full-FeaturedEvaluationBoardfortheADS7804,ADS7805orADS8505,parallelAnalogtoDigital Converters ·IndustryStandard±10VAnalogInputRange ·Builtinreference ·ParallelInterfacewith3-stateoutputdrivers ·Compatiblewiththe5-6KInterfaceBoardforusewithava | TITexas Instruments 德州仪器美国德州仪器公司 |  | | |
DC-4 GHz High Isolation GaAs MMIC SPDT Switch ProductDescription StanfordMicrodevices’SSW-108isahighperformanceGalliumArsenideFieldEffectTransistorMMICswitchhousedinalow-costsurface-mountablesmalloutlineplasticpackage. Thissingle-pole,double-throw,non-reflectiveswitchconsumeslessthan50uAandoperatesat-5Van | STANFORDStanford Microdevices Stanford Microdevices |  | | |
DC-4 GHz High Isolation GaAs MMIC SPDT Switch ProductDescription StanfordMicrodevices’SSW-108isahighperformanceGalliumArsenideFieldEffectTransistorMMICswitchhousedinalow-costsurface-mountablesmalloutlineplasticpackage. Thissingle-pole,double-throw,non-reflectiveswitchconsumeslessthan50uAandoperatesat-5Van | STANFORDStanford Microdevices Stanford Microdevices | | | |
Evaluation Board Rev 5.0 for the Si2493/57/34/15/04 Description TheglobalSi2493/57/34/15/04-EVBevaluationboardRev5.0providesthesystemdesigneraneasywayofevaluatingtheSi2493/57/34/15/04ISOmodem®.TheSi2493/57/34/15/04-EVBconsistsofamotherboardwithapowersupply,anRS-232andUSBinterface,otherease-of-usefeatures,anda | SILABSSilicon Laboratories 芯科科技深圳芯科科技有限公司 |  | | |
600V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
iMOTION™ Modular Application Design Kit Eval-M1-CM610N3isanevaluationboardformotordriveapplicationsbasedona3-phaseIPM.Combinedina kitwithoneoftheavailableMADKcontrolboardoptions,itdemonstratesInfineon'sIPMtechnologyformotor drives.ThekitdemonstratesInfineon’sIPMtechnologyformotordrives. Mainfeat | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | | |
ADS78/8505EVM Users Guide Features ·Full-FeaturedEvaluationBoardfortheADS7804,ADS7805orADS8505,parallelAnalogtoDigital Converters ·IndustryStandard±10VAnalogInputRange ·Builtinreference ·ParallelInterfacewith3-stateoutputdrivers ·Compatiblewiththe5-6KInterfaceBoardforusewithava | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
Tiva™ C Series TM4C123G LaunchPad Evaluation Board Features YourTivaCSeriesLaunchPadincludesthefollowingfeatures: •TivaTM4C123GH6PMImicrocontroller •MotioncontrolPWM •USBmicro-Aandmicro-BconnectorforUSBdevice,host,andon-the-go(OTG)connectivity •RGBuserLED •Twouserswitches(application/wake) •AvailableI/Ob | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
Surface Mount Mini Size 2 Pole Snap-acting Switches Features/Benefits •Surfacemountterminations •IP67 •Redundantcontacts •Changeovertime | CK-COMPONENTS C&K Components | | | |
ADS78/8505EVM Users Guide Features ·Full-FeaturedEvaluationBoardfortheADS7804,ADS7805orADS8505,parallelAnalogtoDigital Converters ·IndustryStandard±10VAnalogInputRange ·Builtinreference ·ParallelInterfacewith3-stateoutputdrivers ·Compatiblewiththe5-6KInterfaceBoardforusewithava | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
DC-6 GHz High Isolation SPDT GaAs MMIC Switch ProductDescription StanfordMicrodevices’SSW-124isahighperfomanceGalliumArsenideFieldEffectTransistorMMICswitchhousedinalow-costsurface-mountable8-pinceramicpackage. ProductFeatures •HighIsolation:42dBat2GHz,30dBat6GHz •LowDCPowerConsumption •Non-reflective | STANFORDStanford Microdevices Stanford Microdevices | | | |
520V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Advanced Power MOSFET FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:25mA(Max.)@VDS=600V LowRDS(ON):9.390Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
DC-4 GHz, High Isolation GaAs MMIC SPDT Switch ProductDescription StanfordMicrodevices’SSW-208isahighperfomanceGalliumArsenideFieldEffectTransistorMMICswitchhousedinalow-costsurface-mountablesmalloutlineplasticpackage. ProductFeatures •HighIsolation:22dBat2GHz •LowDCPowerConsumption •LowInsertionLoss:0 | STANFORDStanford Microdevices Stanford Microdevices | | | |
DC-4 GHz, High Isolation GaAs MMIC SPDT Switch ProductDescription StanfordMicrodevices’SSW-208isahighperfomanceGalliumArsenideFieldEffectTransistorMMICswitchhousedinalow-costsurface-mountablesmalloutlineplasticpackage. ProductFeatures •HighIsolation:22dBat2GHz •LowDCPowerConsumption •LowInsertionLoss:0 | STANFORDStanford Microdevices Stanford Microdevices | | | |
DC-6 GHZ HIGH ISOLATION SPDT GAAS MMIC SWITCH ProductDescription StanfordMicrodevices’SSW-224isahighperfomanceGalliumArsenideFieldEffectTransistorMMICswitchhousedinalow-costsurface-mountable8-pinceramicpackage. ProductFeatures •HighIsolation:40dBat2GHz,30dBat6GHz •LowDCPowerConsumption •BroadPerforman | STANFORDStanford Microdevices Stanford Microdevices | | | |
DC-6 GHZ HIGH ISOLATION SPDT GAAS MMIC SWITCH ProductDescription StanfordMicrodevices’SSW-224isahighperfomanceGalliumArsenideFieldEffectTransistorMMICswitchhousedinalow-costsurface-mountable8-pinceramicpackage. ProductFeatures •HighIsolation:40dBat2GHz,30dBat6GHz •LowDCPowerConsumption •BroadPerforman | STANFORDStanford Microdevices Stanford Microdevices | | | |
600V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Advanced Power MOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:25μA(Max.)@VDS=800V ■LowRDS(ON):4.688Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
DC-3 GHz Low Cost GaAs MMIC SPDT Switch ProductDescription StanfordMicrodevices’SSW-308isahighperfomanceGalliumArsenideFieldEffectTransistorMMICswitchhousedinalow-costsurface-mountablesmalloutlineplasticpackage. ProductFeatures •FastSwitchingSpeed:3nsec •HIghLInearity:+47dBmIP3 •UltraLowDCPower | STANFORDStanford Microdevices Stanford Microdevices | | | |
DC-3 GHz Low Cost GaAs MMIC SPDT Switch ProductDescription StanfordMicrodevices’SSW-308isahighperfomanceGalliumArsenideFieldEffectTransistorMMICswitchhousedinalow-costsurface-mountablesmalloutlineplasticpackage. ProductFeatures •FastSwitchingSpeed:3nsec •HIghLInearity:+47dBmIP3 •UltraLowDCPower | STANFORDStanford Microdevices Stanford Microdevices | | | |
600V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
DC-4 GHz GaAs MMIC SPST Switch ProductDescription StanfordMicrodevices’SSW-508isahighperformanceGalliumArsenideFieldEffectTransistorMMICswitchhousedinalow-costsurface-mountable8-pinsmalloutlineplasticpackage. ProductFeatures •HighIsolation:40dBat1GHz,30dBat2GHz •LowDCPowerConsumption • | STANFORDStanford Microdevices Stanford Microdevices | | | |
DC - 8 GHZ GAAS MMIC SPST SWITCH DC-8GHzGaAsMMICSPSTSwitch | STANFORDStanford Microdevices Stanford Microdevices | | | |
DC - 8 GHZ GAAS MMIC SPST SWITCH DC-8GHzGaAsMMICSPSTSwitch | STANFORDStanford Microdevices Stanford Microdevices | | | |
600V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Advanced Power MOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:25μA(Max.)@VDS=800V ■LowRDS(ON):4.688Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
封装/外壳：4-SMD，无引线 功能：启用/禁用 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：HSO321S/10MHZ/3.3V/50PPM/-40~85C 晶体，振荡器，谐振器 振荡器 | Harmony Electronics Corp / H.ELE. Harmony Electronics Corp / H.ELE. | | | |
Side View LED Of Reflector Type 文件：1.67368 Mbytes Page：17 Pages | SEOUL Seoul Semiconductor Co., Ltd. |  | | |
Side View LED 文件：1.79546 Mbytes Page：22 Pages | SEOUL Seoul Semiconductor Co., Ltd. | | | |
Evaluation Board (ADM00805) User?셲 Guide 文件：1.59001 Mbytes Page：45 Pages | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 |  | | |
Contains all support circuitry needed for the ADS1148/ADS1248 文件：1.83652 Mbytes Page：34 Pages | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) |  | | |
Contains all support circuitry needed for the ADS1146/ADS1246 文件：2.33022 Mbytes Page：27 Pages | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | | | |
EEG Front-End Performance Demonstration Kit 文件：3.3853 Mbytes Page：68 Pages | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | | | |
TLV320AIC3104EVM and TLV320AIC3104EVM-PDK 文件：3.46745 Mbytes Page：60 Pages | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | | | |
Contains all support circuitry needed for the ADS1174/ADS1274 文件：2.69622 Mbytes Page：48 Pages | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | | | |
Performance Demonstration Kit for the ADS130E08 文件：2.36889 Mbytes Page：47 Pages | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | | | |
Contains all support circuitry needed 文件：1.51924 Mbytes Page：32 Pages | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | | | |
SSL1523 high power factor 5 W LED driver for universal 文件：389.83 Kbytes Page：21 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  | | |
THROUGH-HOLE .025 SQ POST SOCKET 文件：1.6708 Mbytes Page：2 Pages | SamtecSamtec Inc. 申泰 |  | | |
Contains all support circuitry needed for the ADS1148/ADS1248 文件：1.83652 Mbytes Page：34 Pages | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | | | |
Contains all support circuitry needed for the ADS1146/ADS1246 文件：2.33022 Mbytes Page：27 Pages | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | | | |
EEG Front-End Performance Demonstration Kit 文件：3.3853 Mbytes Page：68 Pages | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | | | |
TLV320AIC3104EVM and TLV320AIC3104EVM-PDK 文件：3.46745 Mbytes Page：60 Pages | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | | | |
Contains all support circuitry needed for the ADS1174/ADS1274 文件：2.69622 Mbytes Page：48 Pages | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | | | |
Performance Demonstration Kit for the ADS130E08 文件：2.36889 Mbytes Page：47 Pages | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | | | |
Contains all support circuitry needed 文件：1.51924 Mbytes Page：32 Pages | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | | | |
Tiva??C Series TM4C1294 Connected LaunchPad Evaluation Kit 文件：853.32 Kbytes Page：42 Pages | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
ADSP-BF506F EZ-KIT Lite짰 Evaluation System Manual 文件：1.16895 Mbytes Page：75 Pages | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 |  | | |
EEG Front-End Performance Demonstration Kit 文件：3.3853 Mbytes Page：68 Pages | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | | | |
ADSP-BF506F EZ-KIT Lite짰 Evaluation System Manual 文件：1.16895 Mbytes Page：75 Pages | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
ADSP-BF506F EZ-KIT Lite짰 Evaluation System Manual 文件：1.16895 Mbytes Page：75 Pages | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
Thin Film Resistor Network Isolated and Bussed Circuits RoHS compliant available 文件：104.46 Kbytes Page：3 Pages | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 |  | |
SSW产品属性
- 类型
描述
- 型号
SSW
- 功能描述
CONN RCPT .100 6POS DUAL TIN
- RoHS
是
- 类别
连接器，互连式 >> 矩形- 接头，插座，母插口
- 系列
SSW
- 产品目录绘图
SSQ, SSW Right Angle Dual
- 标准包装
1
- 系列
SSQ
- 连接器类型
插座
母形插口
- 位置数
12
- 加载位置的数目
全部
- 间距
0.100（2.54mm）
- 行数
2
- 行间距
0.100（2.54mm）
- 安装类型
通孔，直角
- 端子
焊接
- 紧固型
-
- 特点
-
- 触点表面涂层
锡
- 触点涂层厚度
-
- 颜色
黑
- 包装
散装
- 配套产品
TSW-106-24-G-D-ND - CONN HEADER 12POS .100 DBLTSW-106-14-F-D-LL-ND - CONN HEADER 12POS .100 DBLTSW-106-07-F-D-ND - CONN HEADER 12POS .100 DBLTSM-106-02-S-DH-ND - CONN HEADER 12POS .100 DBL SMDTSM-106-01-T-DV-P-ND - CONN HEADER 12POS .100 DBL SMDTSM-106-01-T-DV-A-P-TR-ND - CONN HEADER 12POS .100 DBL SMDTSM-106-01-T-DV-A-ND - CONN HEADER 12POS .100 DBL SMDTSM-106-01-T-DH-ND - CONN HEADER 12POS .100 DBL SMDTSM-106-01-L-DV-M-TR-ND - CONN HEADER 12POS .100 DBL SMDTSM-106-01-L-DV-ND - CONN HEADER 12POS .100 DBL SMD更多...
- 其它名称
SAM1205-06
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMTEC/申泰 |
21+ |
DIP3 |
6992 |
只做原装正品假一赔十!正规渠道订货! |
|||
SIGMA/TE CONNECTIVITY |
2101 |
QFN-28 |
1920 |
只做原装正品 |
|||
HELE |
17+ |
2174 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
HELE |
22+ |
SMD |
9600 |
原装现货,优势供应,支持实单! |
|||
HELE/加高 |
21+ |
15000 |
原厂VIP渠道,亚太地区一级代理商,可提供更多数量! |
||||
SAMTEC/申泰 |
2024+实力库存 |
SAMTEC |
60 |
只做原厂渠道 可追溯货源 |
|||
SAMTEC |
22+ |
NA |
7857 |
全新原装正品 现货 优势供应 |
|||
HELE/加高 |
2021+ |
3225 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
FAIRCHILD |
2024+ |
TO263 |
32560 |
原装优势绝对有货 |
|||
SAMTEC/申泰 |
22+ |
connector |
2769 |
绝对原装!公司现货! |
SSW芯片相关品牌
SSW规格书下载地址
SSW参数引脚图相关
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- SSW308
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- SSW224
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- SSW-108-01-F-S
- SSW-108
- SSW108
- SSW-107-02-G-D-RA
- SSW-107-02-G-D
- SSW-107-01-G-T
- SSW-106-01-T-S
- SSW-106-01-S-D-002
- SSW-106-01-G-S
- SSW-106-01-G-D
- SSW-105-22-G-S-VS
- SSW-105-22-F-D-VS-K
- SSW-105-01-S-D
- SSW-105-01-G-D
- SSW-104-01-G-S
- SSW-104-01-G-D
- SSW-104-01-F-S
- SSW-104-01-F-D
- SSW-102-02-S-S
- SSW-102-01-T-D
- SSW-102-01-S-D
- SSW-101-01-G-S
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- SSV66A84E34NP
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- SSV66A24A813E34NP
- SS-USB-100
- SSUR71
- SSU-PAM-SD
- SSU-PAM-4
- SSU-PAM-2
- SSU-MR-201/T
- SSU-MR-201/C/R
- SSU7TP27
- SSU7TF05
- SSU7RP27
- SSU7FP27
- SSU7CM27
- SSU6UP32
- SSU6TP32
- SSU6RP32
- SSU17
- SSU14
- SSU13S
- SSU11
- SS-TR
- SSTPAD5
- SSTPAD2
- SSTPAD1
- SSTPAD
- SSTL-15
- SSTJ212
- SSTJ211
- SSTJ210
- SS-TH
- SSTD89A
- SSTC750
- SSTC7
- SSTC625
- SSTC500
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联系人：刘冬英 电话：0755-83203002 传真：0755-82532883 手机：18138231376、18806643356 QQ号：1546282226、微信号：18138231376 公司名称：深圳市光华微科技有限公司 公司地址：深圳市福田区振兴路华匀大厦1栋712室
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SST89E5xRD2/RD和SST89V5xRD2/RD8位微控制器的FlashFlex51家庭成员SST公司的专利产品的设计和制造和专有的SuperFlashCMOS半导体工艺技术。分裂栅单元设计和厚氧化物隧道的喷油器提供显著的成本和可靠性优势SST公司的客户。该设备使用的8051指令设置和引脚对引脚兼容标准的8051微控制器设备。16/24/40K字节的片上闪存设备这是成2个分区的EEPROM程序存储器独立的程序存储器块。主座0占地8/16/32内部程序存储空间的380K字节中学1座，占地8内部的380K字节程序存储空间。
2012-11-8
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