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STD18价格
参考价格:¥2.1369
型号:STD1802T4 品牌:ST Microelectronics 备注:这里有STD18多少钱,2024年最近7天走势,今日出价,今日竞价,STD18批发/采购报价,STD18行情走势销售排行榜,STD18报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
STD18 | Thyristor-Diode Modules, Diode-Thyristor Modules 文件:480.11 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | ||
STD18 | Thyristor-Diode Modules, Diode-Thyristor Modules 文件:1.84346 Mbytes Page:4 Pages | SIRECTSirectifier Global Corp. 矽莱克半导体矽莱克半导体有限公司(深圳) | ||
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Description ThedeviceismanufacturedinPlanartechnologywith“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Verylowcollectortoemittersaturationvoltage ■Highcurrentgaincharacteristic ■Fa | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
isc Silicon NPN Power Transistor DESCRIPTION •LowCollector-EmitterSaturationVoltage- :VCE(sat)=0.4V(Max)(IC=3A;IB=0.15A) •DCCurrentGain-hFE=100(Min)@IC=3A •Fast-Switchingspeed •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •CCFLdirvers •Volt | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Description ThedeviceismanufacturedinPlanartechnologywith“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Verylowcollectortoemittersaturationvoltage ■Highcurrentgaincharacteristic ■Fa | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
Low voltage fast-switching NPN power transistor Description ThedeviceismanufacturedinPlanartechnologywith“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Thisdeviceisqualifiedforautomotiveapplication ■Verylowcollectortoemittersatur | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION ThedeviceismanufacturedinNPNPlanarTechnologybyusingaBaseIslandlayout. TheresultingTransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. ■VERYLOWCOLLECTORTOEMITTERSATURATIONVOLTAGE ■HIGHCURRENTGAINCHARACTERISTIC ■FAS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION ThedeviceismanufacturedinNPNPlanarTechnologybyusingaBaseIslandlayout. TheresultingTransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. ■VERYLOWCOLLECTORTOEMITTERSATURATIONVOLTAGE ■HIGHCURRENTGAINCHARACTERISTIC ■FAS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION ThedeviceismanufacturedinNPNPlanarTechnologybyusingaBaseIslandlayout. TheresultingTransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. ■VERYLOWCOLLECTORTOEMITTERSATURATIONVOLTAGE ■HIGHCURRENTGAINCHARACTERISTIC ■FAS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
P-Channel E nhancement Mode Field Effect Transistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package. | Samhop 三合微科 | |||
P-Channel E nhancement Mode Field Effect Transistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package. | Samhop 三合微科 | |||
NPN Silicon Transistor Descriptions •Audiopoweramplifier •Highcurrentapplication Features •Highcurrent:IC=2A •ComplementarypairwithSTB1277 | AUK AUK | |||
NPN Silicon Transistor Descriptions •Audiopoweramplifier •Highcurrentapplication Features •Highcurrent:IC=2A •ComplementarypairwithSTB1277 | KODENSHIKodenshi Group 可天士可天士光电子集团 | |||
NPN Silicon Transistor Descriptions •Audiopoweramplifier •Highcurrentapplication Features •Highcurrent:IC=2A •ComplementarypairwithSTB1277L | AUK AUK | |||
NPN Silicon Transistor Descriptions •Audiopoweramplifier •Highcurrentapplication Features •Highcurrent:IC=2A •ComplementarypairwithSTB1277L | KODENSHIKodenshi Group 可天士可天士光电子集团 | |||
Power MOSFET MOSFET–Power,N-Channel,LogicLevel,DPAK18A,60V Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features •AECQ101Qualified−NTDV18N06L •TheseDevicesarePb−FreeandareRoHSCompliant Typical | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
N-channel 550 V, 0.18 廓, 13 A, MDmesh??V Power MOSFET in D짼PAK, DPAK, TO-220FP and TO-220 Description ThedevicesareN-channelMDmesh™VPowerMOSFETbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatchedam | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel 600 V, 230 m typ., 13 A, MDmesh M6 Power MOSFET in a DPAK package Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Description ThenewMDmeshM6technologyincorporatesthemostrecentadvancementstothe well-knownandconsolidatedMDmeshfamilyof | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
Isc N-Channel MOSFET Transistor •FEATURES •HigherVDSSrating •Excellentswitchingperformance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-channel 650 V, 0.198 廓 typ., 15 A MDmesh??V Power MOSFET in D짼PAK and DPAK packages Description ThesedevicesareN-channelPowerMOSFETsbasedontheMDmesh™M5innovativeverticalprocesstechnologycombinedwiththewell-knownPowerMESH™horizontallayout.Theresultingproductsofferextremelylowon-resistance,makingthemparticularlysuitableforapplicationsrequiringhi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
Automotive-grade N-channel 30 V, 38 mΩ typ., 17 A STripFET II Power MOSFET in a DPAK package Features AEC-Q101qualified Exceptionaldv/dtcapability 100avalanchetested Lowgatecharge Applications •Switchingapplications Description ThisPowerMOSFEThasbeendevelopedusingSTMicroelectronics'unique STripFETprocess,whichisspecificallydesignedtominimizeinputcapa | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
Low voltage fast-switching NPN power transistor 文件:248.9 Kbytes Page:10 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
Low voltage fast-switching NPN power transistor 文件:248.9 Kbytes Page:10 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
Low voltage fast-switching NPN power transistor 文件:248.9 Kbytes Page:10 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 60V 3A DPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:散装 描述:TRANS NPN 60V 5A IPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel 40 V, 2.5 m廓 typ., 80 A STripFET??F6 Power MOSFET in a DPAK package 文件:775.21 Kbytes Page:16 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件:484.58 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件:484.58 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules 文件:368.46 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules 文件:995.59 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件:484.58 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules 文件:368.46 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules 文件:995.59 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件:484.58 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules 文件:368.46 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules 文件:995.59 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件:484.58 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules 文件:368.46 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules 文件:995.59 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件:484.58 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules 文件:368.46 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules 文件:995.59 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules 文件:995.59 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules 文件:995.59 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules 文件:368.46 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules 文件:995.59 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
P-Channel 60 V (D-S) MOSFET 文件:998.13 Kbytes Page:7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件:480.11 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件:1.84346 Mbytes Page:4 Pages | SIRECTSirectifier Global Corp. 矽莱克半导体矽莱克半导体有限公司(深圳) | |||
Thyristor-Diode Modules 文件:266.59 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件:480.11 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件:1.84346 Mbytes Page:4 Pages | SIRECTSirectifier Global Corp. 矽莱克半导体矽莱克半导体有限公司(深圳) | |||
Thyristor-Diode Modules 文件:266.59 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件:480.11 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件:1.84346 Mbytes Page:4 Pages | SIRECTSirectifier Global Corp. 矽莱克半导体矽莱克半导体有限公司(深圳) | |||
Thyristor-Diode Modules 文件:266.59 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件:480.11 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件:1.84346 Mbytes Page:4 Pages | SIRECTSirectifier Global Corp. 矽莱克半导体矽莱克半导体有限公司(深圳) | |||
Thyristor-Diode Modules 文件:266.59 Kbytes Page:4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 |
STD18产品属性
- 类型
描述
- 型号
STD18
- 制造商
SIRECTIFIER
- 制造商全称
Sirectifier Semiconductors
- 功能描述
Thyristor-Diode Modules, Diode-Thyristor Modules
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
STMicroelectronics Asia Pacifi |
23+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
ST(意法半导体) |
23+ |
TO-252 |
2669 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ST/意法 |
23+ |
NA/ |
10 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST/意法 |
2022 |
TO-252 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
ST |
23+ |
TO252 |
18000 |
||||
ST |
15+ |
TO252 |
3911 |
只做原装,公司现货,提供一站式BOM配单服务! |
|||
22+ |
SOP |
9800 |
只做原装正品假一赔十!正规渠道订货! |
||||
ST |
23+ |
TO251 |
6996 |
只做原装正品现货 |
|||
STMicroelectronics |
24+ |
DPAK |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
ST/意法 |
21+ |
TO-252-3 |
60000 |
绝对原装正品现货,假一罚十 |
STD18规格书下载地址
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