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STI42N65M5价格
参考价格：￥41.2012
型号：STI42N65M5 品牌：STMicroelectronics 备注：这里有STI42N65M5多少钱，2024年最近7天走势，今日出价，今日竞价，STI42N65M5批发/采购报价，STI42N65M5行情走势销售排行榜，STI42N65M5报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STI42N65M5 | iscN-ChannelMOSFETTransistor FEATURES •DrainCurrent–ID=33A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=79mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switchingappl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
STI42N65M5 | N-channel650V,0.070廓,33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | |
STI42N65M5 | N-channel650V,0.070??33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
STI42N65M5 | N-channel650V,0.070ohm,33AMDmeshVPowerMOSFET 文件：1.10667 Mbytes Page：18 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
N-channel650V,0.070??33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-channel650V,0.070廓,33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-channel650V,0.070廓,33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-channel650V,0.070ohm,33AMDmeshVPowerMOSFET 文件：1.10667 Mbytes Page：18 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
iscN-ChannelMOSFETTransistor 文件：313.28 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
STI42N65M5产品属性
- 类型
描述
- 型号
STI42N65M5
- 功能描述
MOSFET NCH 65V 33A MDMESH V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STS |
22+ |
TO262 |
50000 |
只做原装正品,假一罚十,欢迎咨询 |
|||
ST/意法半导体 |
21+ |
TO-262-3 |
13880 |
公司只售原装,支持实单 |
|||
ST/意法半导体 |
23+ |
TO-262-3 |
12700 |
买原装认准中赛美 |
|||
ST |
22 |
TO262 |
25000 |
3月31原装,微信报价 |
|||
ST |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原厂渠道,现货配单 |
|||
ST/意法半导体 |
21+ |
TO-262-3 |
8860 |
原装现货,实单价优 |
|||
STMICROEL |
23+ |
NA |
2055 |
专做原装正品,假一罚百! |
|||
ST/意法半导体 |
23+ |
TO-262-3 |
7188 |
秉承只做原装 终端我们可以提供技术支持 |
|||
ST/意法半导体 |
23+ |
TO-262-3 |
8860 |
原装正品，支持实单 |
|||
ST/意法半导体 |
22+ |
TO-262-3 |
10000 |
十年沉淀唯有原装 |
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STI42N65M5规格书下载地址
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2019-4-11
DdatasheetPDF页码索引
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