SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforDC/DCConvertersandpowermanagementapplicationofnotebookcomputers. FEATURES •Superlowon-stateresistance RDS(on)1=19.0mΩTYP.(VGS=10V,ID=4.0A) RDS(on)2=30.0mΩTYP.(VGS=4.5V,ID=

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistor designedforDC/DCConvertersandpowermanagement applicationofnotebookcomputers. FEATURES ·Superlowon-stateresistance RDS(on)1=19.0mWTYP.(VGS=10V,ID=4.0

CustomerSpecification

Construction Diameters(In) 1)Component11X1COND a)Conductor24(10/34)AWGTinnedCopper0.024 b)Insulation0.016Wall,Nom.Polyethylene(PE)0.056 (1)Color(s) CondColorCondColorCondColor 1WHITE 2)Shield TinnedCopperSPIRALShield,90 Coverage,Min. 3)Jacket0.020Wall,

T-1SubminiatureLamps

T-1¾WireLead T-1¾MiniatureFlanged T-1¾MiniatureGrooved T-1¾MidgetScrew T-1¾Bi-Pin

ACFilmCapacitorsLighting

Features ■Self-healingproperties ■Lowdissipationfactor ■Highinsulationresisitance Construction ■Dielectric:polypropylenefilm ■Aluminiumcan ■Softpolyurethanresin ■Internaldischageresistor ■Overpressuredisconnector Typicalapplications Forgeneralsinewaveapplicat

AM1705ARMMicroprocessor

文件：991.95 Kbytes Page：155 Pages

AM1705ARMMicroprocessor

文件：999.99 Kbytes Page：155 Pages