SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforDC/DCconvertersandpowermanagementswitch. FEATURES •Lowon-resistance RDS(on)1=9.3mΩ(TYP.)(VGS=10V,ID=4.5A) RDS(on)2=13.8mΩ(TYP.)(VGS=4.5V,ID=4.5A) •LowCiss:Ciss=1850pF

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES •Lowon-resistance RDS(on)1=9.3mΩ(TYP.)(VGS=10V,ID=4.5A) RDS(on)2=13.8mΩ(TYP.)(VGS=4.5V,ID=4.5A) •LowCiss:Ciss=1850pF(TYP.) •Built-inG-Sprotectiondiode •Smallandsurfacemountpackage(Power

N-Channel100-V(D-S)MOSFET

文件：1.71381 Mbytes Page：8 Pages

CustomerSpecification

Construction Diameters(In) 1)Component12X1COND a)Conductor24(10/34)AWGTinnedCopper0.024 b)Insulation0.016Wall,Nom.Polyethylene(PE)0.056 (1)Color(s) CondColorCondColorCondColor 1WHITE2BLACK 2)CableAssembly2ComponentsCabled a)Twists:8.0Twists/foot(min)

SAWIFfilter

SAWComponentsSAWIFfilter Satelliteradio Features ■Packagesize7.0x5.0x1.48mm3 ■PackagecodeQCC12C ■RoHScompatible ■Approximateweight0.20g ■CeramicpackageforSurfaceMountTechnology(SMT) ■Ni,gold-platedterminals ■ElectrostaticSensitiveDevice(ESD)

CAPTIVEPANELSCREWS

文件：395.93 Kbytes Page：1 Pages

CCFLINVERTER

文件：1.66101 Mbytes Page：2 Pages

EMCDESIGNGUIDEFORSTMICROCONTROLLERS

文件：662.36 Kbytes Page：38 Pages