SWITCHINGP-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION ThisproductisP-ChannelMOSFieldEffectTransistordesignedforDC/DCconvertersandpowermanagementapplicationsofnotebookcomputers. FEATURES •Lowon-resistance RDS(on)1=12.5mΩTYP.(VGS=–10V,ID=–4A) RDS(on)2=17.0mΩTYP.(VGS=–4.5V,ID=–4A) RD

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES ·Lowon-resistance RDS(on)1=12.5mWTYP.(VGS=–10V,ID=–4A) RDS(on)2=17.0mWTYP.(VGS=–4.5V,ID=–4A) RDS(on)3=19.0mWTYP.(VGS=–4.0V,ID=–4A) ·LowCiss:Ciss=2100pFTYP. ·Built-inG-Sprotectiond

CustomerSpecificationS

Construction Diameters(In) 1)Component15X1COND a)Conductor20(26/34)AWGTinnedCopper0.038 b)Insulation0.015Wall,Nom.Polyethylene(PE)0.068 (1)ColorCodeAlphaWireColorCodeH CondColorCondColorCondColor 1BLACK3RED5YELLOW 2WHITE4GREEN 2)CableAssembly5Co

HIGHCONTACTCAPACITY,PRECISEOPERATION

AM1(NZ)SWITCHES FEATURES •10ACurrentswitchingcapacity •Highprecisionandlonglife •Versatilevarietyofactuators •ScrewterminaltypescanbeusedwithM4crimpterminals TYPICALAPPLICATIONS •Transfermachine •Packingmachine •Textileequipment •Cuttingmachine •Foot

CapacitiveSensorInterface

GeneralDescription AS1716isananalogfrontendspecificallydesignedforunbiasedCapacitiveSensors,asforinstanceKnockSensorsinAutomotive,tobeinterfacedwithAnalogDigitalConverterswithSampleandHoldinputstages. Thedeviceprovidesdifferentialinputs,a1storderlowpassf

HIGHPOWERLEDDRIVER

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500mA,LowDropout,CMOSLinearRegulator

文件：589.28 Kbytes Page：20 Pages