- 英文简称:UNITEDSIC
- 英文全称:UnitedSiC.
- 中文简称:UnitedSiC.
- 中文全称:UnitedSiC.
- 公司官网:https://unitedsic.com/
UNITEDSIC
中文资料: 117条
UNITEDSIC公司简介
Our Vision
To accelerate SiC adoption using our innovative device technology, enabling our customers to deliver industry transforming levels of power efficiency to society’s most advanced applications, particularly in mobility, IT infrastructure and renewable energy.
SiC Going Mainstream
Humans are experiencing a revolution in how we generate, convert, distribute, and use electrical power. As the world moves away from fossil fuels towards a more renewable, energy-efficient, and electrified energy ecosystem, efficiency in power conversion processes becomes critically important.
Luckily, investments in wide bandgap research over the last several decades have now culminated in a mature supply chain for SiC power devices that fundamentally transform the efficiency and power density capable in mainstream power converters.
Committed to Technology Leadership
Our technology provides our customers with the easiest path to upgrade their legacy power designs or obtain the highest power densities in their new designs with minimal effort. Our technology enables straightforward Si Superjunction replacement for PFC, LLC, or PSFB topologies as well as direct compatibility with any SiC MOSFET competitor’s gate drive requirements.
In addition, we have the highest performance body diode in a SiC device, lowest Qrr over temperature, nearly 5V threshold voltage for EMI immunity, and superior short circuit ratings. All this comes with the industry’s widest SiC discrete transistor portfolio.
Capitalizing on Megatrends in Growth Markets
UnitedSiC FETs are enjoying widespread acceptance in fast-growing markets around the globe, particularly in high voltage DC-DC power conversion topologies such as LLC, and Phase Shifted Full Bridge, as well as AC-DC applications such as 6-switch SiC solutions replacing Vienna Rectifier and Totem Pole PFC. In the fast-growing market of EV motor drives, UnitedSiC’s industry highest performance, lowest R(DS)-on FETs, with ratings at both 650 V and 1200 V, are quickly becoming the product of choice for EV power designers.
SiC FETs are a major contributor to performance and reliability improvements, with overall system cost reduction in next-generation data centers. In addition, we provide important charging time and length of charge benefits for industrial vehicles. Finally, our superior efficiency ratings make the UnitedSiC products the perfect solution for solar array technology. Given this type of designer acceptance, it’s clear that silicon carbide devices are becoming one of the key enablers in these fast growing markets.
UNITEDSIC产品页码索引
UNITEDSIC芯片中文资料
- UJ4SC075011B7S
- UF3SC120016K3S
- UF3N065600Z
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UNITEDSIC技术资料下载
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UNITEDSIC产品资料
- UF3N120140Z
- UF3SC120040B7S
- UF3N090350Z
- UF3SC065040D8S
- UF3C065040K4S
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UNITEDSIC规格书PDF下载
- UF3SC120016K4S
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