位置：首页 > IC中文资料第5833页 > W29EE512
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
W29EE512 | 64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 |  |   |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
512Kbit(64Kx8)Page-WriteEEPROM PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro | SST Silicon Storage Technology，Inc. |  | | |
512Kbit(64Kx8)Page-WriteEEPROM PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro | SST Silicon Storage Technology，Inc. | | | |
512Kbit(64Kx8)Page-WriteEEPROM 文件：871.45 Kbytes Page：23 Pages | GreenliantGreenliantsystems,LTD 绿芯 |  | | |
512Kbit(64Kx8)Page-WriteEEPROM 文件：423.31 Kbytes Page：26 Pages | SST Silicon Storage Technology，Inc. | | |
W29EE512产品属性
- 类型
描述
- 型号
W29EE512
- 制造商
WINBOND
- 制造商全称
Winbond
- 功能描述
64K X 8 CMOS FLASH MEMORY
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
WINBIND |
22+ |
TSOP32 |
10000 |
原装正品优势现货供应 |
|||
winbond |
428 |
TSSOP |
2000 |
全新原装 绝对有货 |
|||
WINBOND |
2022 |
PLCC |
5950 |
全新原装现货 |
|||
WINBON |
23+ |
NA |
8021 |
专业电子元器件供应链正迈科技特价代理QQ1304306553 |
|||
WINBOND(华邦) |
21+ |
PLCC |
3800 |
||||
WINBOND |
23+ |
TSOP32 |
6000 |
原装正品，支持实单 |
|||
WINBOND/华邦 |
03+ |
PLCC-32 |
126 |
原装现货低价销售 |
|||
WINBOND |
22+23+ |
TSOP32 |
21382 |
绝对原装正品全新进口深圳现货 |
|||
WINBONB |
23+ |
PLCC |
3000 |
全新原装、诚信经营、公司现货销售 |
|||
winbond |
1926+ |
TSSOP |
6852 |
只做原装正品现货!或订货假一赔十! |
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