ThinkiSemi200V,32AN-ChannelPlanarProcessPowerMOSFETs

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N-channel200V-0.065廓-30A-TO-220/TO-247/D2PAKLowgatechargeSTripFET??PowerMOSFET

Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisthereforesuitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconverters. Features ■Gatechargemin

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=30A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=75mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

iscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220packaging •Highspeedswitching •Veryhighcommutationruggedness •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperationz •APPLICATIONS •PFCstages •LCD&PDPTV •Powersupply •Switchi

N-channel200V-0.065-30A-TO-220/TO-247/D2PAKLowgatechargeSTripFETPowerMOSFET

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Verygoodmanufacturingrepeatability

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