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CEU3价格
参考价格:¥0.2600
型号:CEU3E2X7R1H103K080AE 品牌:TDK 备注:这里有CEU3多少钱,2024年最近7天走势,今日出价,今日竞价,CEU3批发/采购报价,CEU3行情走势销售排行榜,CEU3报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
CEU3 | Multilayer Ceramic Chip Capacitors 文件:60.69 Kbytes Page:5 Pages | TDKTDK Corporation 东电化(中国)投资有限公司 | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V,-87A,RDS(ON)=5.8mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.1mW@VGS=-4.5V. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■60V,8A,RDS(ON)=150mΩ@VGS=10V. RDS(ON)=180mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
Dual N-Channel Enhancement Mode Field Effect Transistor
| CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor
| CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■30V,75A,RDS(ON)=6.6mW@VGS=10V. RDS(ON)=9.5mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V,75A,RDS(ON)=6.6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.5mW@VGS=4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V,77A,RDS(ON)=6.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=8.5mW@VGS=4.5V. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■30V,62A,RDS(ON)=9.5mΩ@VGS=10V. RDS(ON)=13.5mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 80V,30A,RDS(ON)=30mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant. RDS(ON)=38mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
P-Channel Enhancement Mode Field Effect Transistor FEATURES ■-100V,-30A,RDS(ON)=76mΩ@VGS=-10V. RDS(ON)=92mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V,-27A,RDS(ON)=76mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=92mW@VGS=-4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V,-29A,RDS(ON)=55mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. Pb-freeleadplating;RoHScompliant. HalogenFree. RDS(ON)=60mW@VGS=-4.5V. Switchedmode | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■30V,51A,RDS(ON)=10mΩ@VGS=10V. RDS(ON)=17mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-Channel MOSFET uses advanced trench technology Description: ThisN-ChannelMOSFETusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features: 1)VDS=30V,ID=55A,RDS(ON) | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V,51A,RDS(ON)=10mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=17mW@VGS=4.5V. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 30V,22A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-252-4Lpackage. RDS(ON)=20mW@VGS=4.5V. Lead-freeplating;RoHScompliant. -30V,-18A,RDS(ON)=20mW@VGS=10V. RDS(ON)=30mW@VGS | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V,45A,RDS(ON)=11mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=15mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■30V,36A,RDS(ON)=15mΩ@VGS=10V. RDS(ON)=22mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V,36A,RDS(ON)=15mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=22mW@VGS=4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V,-35A,RDS(ON)=16mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=27mW@VGS=-4.5V. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 30V,22A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RDS(ON)=20mW@VGS=4.5V. -30V,-13A,RDS(ON)=32mW@VGS=10V. RDS(ON)=45mW@VGS=4.5V. TO-252-4Lpackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■30V,36A,RDS(ON)=20mΩ@VGS=10V. RDS(ON)=28mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V,36A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=32mW@VGS=4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■30V,25A,RDS(ON)=28mΩ@VGS=10V. RDS(ON)=39mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V,26A,RDS(ON)=25mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RDS(ON)=39mW@VGS=4.5V. TO-251&TO-252package. Pb-freeleadplating;RoHScompliant. HalogenFree. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
P-Channel Enhancement Mode Field Effect Transistor FEATURES ■-30V,-28A,RDS(ON)=32mΩ@VGS=-10V. RDS(ON)=50mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V,-28A,RDS(ON)=32mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=50mW@VGS=-4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
P-Channel Enhancement Mode Field Effect Transistor FEATURES ■-30V,-18A,RDS(ON)=45mΩ@VGS=-10V. RDS(ON)=80mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V,-20A,RDS(ON)=45mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=80mW@VGS=-4.5V. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■30V,12A,RDS(ON)=95mΩ@VGS=10V. RDS(ON)=130mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-Channel MOSFET uses advanced trench technology 文件:993.67 Kbytes Page:4 Pages | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | |||
CED30N08 文件:577.79 Kbytes Page:4 Pages | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor 文件:415.04 Kbytes Page:4 Pages | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-Channel MOSFET uses advanced trench technology 文件:881.12 Kbytes Page:5 Pages | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | |||
P-Channel Enhancement Mode Field Effect Transistor 文件:447.73 Kbytes Page:4 Pages | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
P-Channel Enhancement Mode Field Effect Transistor 文件:400.03 Kbytes Page:4 Pages | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
CEU SERIES 文件:1.98285 Mbytes Page:1 Pages | TDKTDK Corporation 东电化(中国)投资有限公司 | |||
Automotive Grade ( Serial Design ) 文件:139.1 Kbytes Page:1 Pages | TDKTDK Corporation 东电化(中国)投资有限公司 | |||
封装/外壳:0603(1608 公制) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:CAP CER 10000PF 50V X7R 0603 电容器 陶瓷电容器 | TDKTDK Corporation 东电化(中国)投资有限公司 | |||
封装/外壳:0603(1608 公制) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:CAP CER 10000PF 50V X7R 0603 电容器 陶瓷电容器 | TDKTDK Corporation 东电化(中国)投资有限公司 | |||
Automotive Grade ( Serial Design ) 文件:139.1 Kbytes Page:1 Pages | TDKTDK Corporation 东电化(中国)投资有限公司 | |||
Automotive Grade ( Serial Design ) 文件:138.94 Kbytes Page:1 Pages | TDKTDK Corporation 东电化(中国)投资有限公司 | |||
Automotive Grade ( Serial Design ) 文件:138.95 Kbytes Page:1 Pages | TDKTDK Corporation 东电化(中国)投资有限公司 | |||
Automotive Grade ( Serial Design ) 文件:138.96 Kbytes Page:1 Pages | TDKTDK Corporation 东电化(中国)投资有限公司 | |||
Automotive Grade ( Serial Design ) 文件:138.96 Kbytes Page:1 Pages | TDKTDK Corporation 东电化(中国)投资有限公司 | |||
Automotive Grade ( Serial Design ) 文件:138.98 Kbytes Page:1 Pages | TDKTDK Corporation 东电化(中国)投资有限公司 | |||
Automotive Grade ( Serial Design ) 文件:138.98 Kbytes Page:1 Pages | TDKTDK Corporation 东电化(中国)投资有限公司 | |||
Automotive Grade ( Serial Design ) 文件:139.08 Kbytes Page:1 Pages | TDKTDK Corporation 东电化(中国)投资有限公司 | |||
Automotive Grade ( Serial Design ) 文件:139.08 Kbytes Page:1 Pages | TDKTDK Corporation 东电化(中国)投资有限公司 | |||
Automotive Grade ( Serial Design ) 文件:138.79 Kbytes Page:1 Pages | TDKTDK Corporation 东电化(中国)投资有限公司 | |||
Automotive Grade ( Serial Design ) 文件:138.79 Kbytes Page:1 Pages | TDKTDK Corporation 东电化(中国)投资有限公司 | |||
Automotive Grade ( Serial Design ) 文件:139.04 Kbytes Page:1 Pages | TDKTDK Corporation 东电化(中国)投资有限公司 | |||
Automotive Grade ( Serial Design ) 文件:139.04 Kbytes Page:1 Pages | TDKTDK Corporation 东电化(中国)投资有限公司 | |||
Automotive Grade ( Serial Design ) 文件:138.9 Kbytes Page:1 Pages | TDKTDK Corporation 东电化(中国)投资有限公司 | |||
Automotive Grade ( Serial Design ) 文件:138.89 Kbytes Page:1 Pages | TDKTDK Corporation 东电化(中国)投资有限公司 | |||
Automotive Grade ( Serial Design ) 文件:138.85 Kbytes Page:1 Pages | TDKTDK Corporation 东电化(中国)投资有限公司 | |||
Automotive Grade ( Serial Design ) 文件:138.85 Kbytes Page:1 Pages | TDKTDK Corporation 东电化(中国)投资有限公司 | |||
Automotive Grade ( Serial Design ) 文件:138.78 Kbytes Page:1 Pages | TDKTDK Corporation 东电化(中国)投资有限公司 | |||
Automotive Grade ( Serial Design ) 文件:138.79 Kbytes Page:1 Pages | TDKTDK Corporation 东电化(中国)投资有限公司 |
CEU3产品属性
- 类型
描述
- 型号
CEU3
- 制造商
TDK
- 制造商全称
TDK Electronics
- 功能描述
Multilayer Ceramic Chip Capacitors
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
CET |
2016+ |
TO252 |
2500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
CET |
2020+ |
TO252 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
CET/華瑞 |
22+ |
TO-252 |
3000 |
原装现货假一赔十 |
|||
CET/華瑞 |
22+ |
TO-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
CET |
23+ |
TO252 |
20000 |
||||
TDK |
20+ |
SMD |
362200 |
TDK原装优势主营型号-可开原型号增税票 |
|||
CET/華瑞 |
24+ |
TO-252 |
156767 |
明嘉莱只做原装正品现货 |
|||
CETSEMI |
新年份 |
TO-252 |
33288 |
原装正品现货,实单带TP来谈! |
|||
CET |
2020+ |
TO-252 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
TO-252 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
CEU3规格书下载地址
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DdatasheetPDF页码索引
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