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IRF630价格
参考价格:¥1.3192
型号:IRF630 品牌:STMICROELECTRONICS 备注:这里有IRF630多少钱,2024年最近7天走势,今日出价,今日竞价,IRF630批发/采购报价,IRF630行情走势销售排行榜,IRF630报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
IRF630 | N-channelTrenchMOStransistor GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | ||
IRF630 | N-CHANNEL200V-0.35ihm-9A-TO-220/FPMESHOVERLAY]MOSFET Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY™process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. Generalfeatures ■Extremelyhighdv/dtcapability ■Verylowintrinsic | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
IRF630 | N-ChannelPowerMOSFETs,12A,150-200V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
IRF630 | 9A,200V,0.400Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | ||
IRF630 | N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.25Ω ■AVALANCERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACHTERIZATION APPLICATIONS ■HIGHSPEEDSWITCHING ■UNINTERRUPTIBLEPOWERSUPPLY(UPS) ■MOTORCO | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
IRF630 | PowerMOSFET PowerMOSFET VDSS=200V,RDS(on)=0.40ohm,ID=9.0A | TEL TRANSYS Electronics Limited | ||
IRF630 | POWERMOSFET GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. FEATURES ◆Dynamicdv/dtRating ◆RepetitiveAvalancheRated ◆FastSwitching ◆EaseofParalleling ◆SimpleDrive | SUNTACSuntac Electronic Corp. Suntac Electronic Corp. | ||
IRF630 | N-CHANNELENHANCEMENTMODEPOWERMOSFET Description APECMOSFETprovidethepowerdesignerwiththebestcombinationoffastswitching,loweron-resistanceandreasonablecost. TheTO-220andpackageisuniversallypreferredforallcommercial-industrialapplications.Thedeviceissuitedforswitchmodepowersupplies,DC-ACconvert | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | ||
IRF630 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技 | ||
IRF630 | TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET Description Designedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. Features *RepetitiveAvalancheRated *FastSwitching *EaseofParalleling *SimpleDriveRequirements | DCCOMDc Components 直流元件直流元件有限公司 | ||
IRF630 | N-channelmosfettransistor Features •WithTO-220package •Lowon-stateandthermalresistance •Fastswitching •VDSS=200V;RDS(ON)≤0.4Ω;ID=9A •1.gate2.drain3.source | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
IRF630 | PowerMOSFET(Vdss=200V,Rds(on)=0.40ohm,Id=9.0A) Description ThirdGenerationHEXFETsMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •FastSwitching •EaseofParall | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRF630 | PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | KERSEMI Kersemi Electronic Co., Ltd. | ||
IRF630 | NCHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS FEATURE NchannelinaplasticTO220package. Theyareintendedforuseinhighspeedswitching, uninterruptiblepowersupply,motorcontrol,audioamplifiers, industrialactuators. DC-DC&DC-ACconvertersfortelecom,industrialand consumerenvironment. Complianc | COMSET Comset Semiconductor | ||
IRF630 | N-ChannelPowerMOSFETs,12A,150-200V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ● | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
IRF630 | N-ChannelPowerMOSFET DESCRIPTION TheNellIRF630areN-channelenhancementmodesilicongatepowerfieldeffecttransistors. Theyaredesigned,testedandguaranteedtowithstandlevelofenergyinbreakdownavalanchemadeofoperation. Theyaredesignedasanextremelyefficientandreliabledeviceforuseinawi | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | ||
IRF630 | N-ChannelPowerMOSFETs,12A,150-200V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ● | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
IRF630 | PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH | VishayVishay Siliconix 威世科技 | ||
IRF630 | N-channelTrenchMOStransistor 文件:923.6 Kbytes Page:3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
IRF630 | FIELDEFFECTPOWERTRANSISTOR 文件:910.79 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
IRF630 | N-ChannelPowerMosfets 文件:155.57 Kbytes Page:6 Pages | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ||
IRF630 | SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | ||
IRF630 | FIELDEFFECTPOWERTRANSISTOR 文件:854.87 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
IRF630 | PowerMOSFET 文件:283.3 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | ||
IRF630 | N-channel200V-0.35廓-9ATO-220/TO-220FPMeshoverlay??IIPowerMOSFET 文件:336.19 Kbytes Page:14 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH | VishayVishay Siliconix 威世科技 | |||
AdvancedPowerMOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):0.333Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
iscN-ChannelMOSFETTransistor DESCRIPTION •DrainCurrent–ID=9A@TC=25℃ •DrainSourceVoltage- :VDSS=200V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) •FastSwitchingSpeed •LowDriveRequirement APPLICATIONS •Thisdeviceisn-channel,enhancementmode,powerMOSFET designedespecia | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingKersemiproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighe | KERSEMI Kersemi Electronic Co., Ltd. | |||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
iscN-ChannelMOSFETTransistor DESCRIPTION ·DrainCurrent–ID=9A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ·FastSwitchingSpeed ·LowDriveRequirement ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·This | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-ChannelMOSFETTransistor DESCRIPTION •DrainCurrent–ID=9A@TC=25℃ •DrainSourceVoltage- :VDSS=200V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) •FastSwitchingSpeed APPLICATIONS •DesingedforhighefficiencyswitchingDC/DCconverters, switchmodepowersupplies,DC-ACconver | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
N-channelmosfettransistor ♦Features ·WithTO-220Fpackage ·Lowon-stateandthermalresistance ·Fastswitching ·VDSS=200V;RDS(ON)≤0.4Ω;ID=9A ·1.gate2.drain3.source | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.25Ω ■AVALANCERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACHTERIZATION APPLICATIONS ■HIGHSPEEDSWITCHING ■UNINTERRUPTIBLEPOWERSUPPLY(UPS) ■MOTORCO | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
iscN-ChannelMOSFETTransistor •DESCRITION •Designedforhighspeedapplications,suchasswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulse. •FEATURES •RDS(on)=0.4Ω •6Aand200V •singlepulseavalancheenergyrated •SOAisPower-DissipationLimited •LinearTransfer | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-CHANNEL200V-0.35ihm-9A-TO-220/FPMESHOVERLAY]MOSFET Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY™process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. Generalfeatures ■Extremelyhighdv/dtcapability ■Verylowintrinsic | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL200V-0.35W-9ATO-220/TO-220FPMESHOVERLAYMOSFET Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY™process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources.IsolatedTO-220optionsimplifiesassemblyandcutsriskofaccidentalsh | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL200V-0.35W-9ATO-220/TO-220FPMESHOVERLAYMOSFET Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY™process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources.IsolatedTO-220optionsimplifiesassemblyandcutsriskofaccidentalsh | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-Channel200V(D-S)MOSFET FEATURES •IsolatedPackage •HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) •SinktoLeadCreepageDistance=4.8mm •175°COperatingTemperature •DynamicdV/dtRating •LowThermalResistance •Lead(Pb)-freeAvailable | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-ChannelMOSFETTransistor DESCRIPTION ●DrainCurrent–ID=9.3A@TC=25℃ ●DrainSourceVoltage- :VDSS=200V(Min) ●StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ●FastSwitchingSpeed ●LowDriveRequirement APPLICATIONS ●Thisdeviceisn-channel,enhancementmode,powerMOSFETdesignedespecially | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
N-ChannelPowerMOSFETs200V,9.3A,0.30? Features •UltraLowOn-Resistance -rDS(ON)=0.200Ω(Typ),VGS=10V •SimulationModels -TemperatureCompensatedPSPICE®andSABER©ElectricalModels -SpiceandSABER©ThermalImpedanceModels •PeakCurrentvsPulseWidthCurve •UISRatingCurve | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
PowerMOSFET(Vdss=200V,Rds(on)=0.30ohm,Id=9.3A) Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
iscN-ChannelMOSFETTransistor •DESCRITION •Efficientandreliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.3Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableop | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
FastSwitchingSpeed DESCRIPTION ●DrainCurrent–ID=9.3A@TC=25℃ ●DrainSourceVoltage- :VDSS=200V(Min) ●StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ●FastSwitchingSpeed ●LowDriveRequirement APPLICATIONS ●Thisdeviceisn-channel,enhancementmode,powerMOSFETdesignedespecially | KERSEMI Kersemi Electronic Co., Ltd. | |||
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-262packaging •Highspeedswitching •Lowgateinputresistance •Standardlevelgatedrive •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Powersupply •Switchingapplicatio | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PowerMOSFET(Vdss=200V,Rds(on)=0.30ohm,Id=9.3A) Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-ChannelPowerMOSFETs200V,9.3A,0.30? Features •UltraLowOn-Resistance -rDS(ON)=0.200Ω(Typ),VGS=10V •SimulationModels -TemperatureCompensatedPSPICE®andSABER©ElectricalModels -SpiceandSABER©ThermalImpedanceModels •PeakCurrentvsPulseWidthCurve •UISRatingCurve | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
AdvancedProcessTechnology Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET(Vdss=200V,Rds(on)=0.30ohm,Id=9.3A) Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-ChannelPowerMOSFETs200V,9.3A,0.30? Features •UltraLowOn-Resistance -rDS(ON)=0.200Ω(Typ),VGS=10V •SimulationModels -TemperatureCompensatedPSPICE®andSABER©ElectricalModels -SpiceandSABER©ThermalImpedanceModels •PeakCurrentvsPulseWidthCurve •UISRatingCurve | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
AdvancedProcessTechnology Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | KERSEMI Kersemi Electronic Co., Ltd. | |||
N-Channel200V(D-S)MOSFET FEATURES •175°CJunctionTemperature •PWMOptimized •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PrimarySideSwitch •DT-TrenchPowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET PowerMOSFET VDSS=200V,RDS(on)=0.40ohm,ID=9.0A | TEL TRANSYS Electronics Limited | |||
N-channelTrenchMOStransistor GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthe | VishayVishay Siliconix 威世科技 | |||
N-CHANNEL200V-0.35ohm-9A-D2PAKMESHOVERLAY]MOSFET DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAYprocess.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.35Ω ■EXTREMELYHIGHdv/dtCAPABILITY ■100A | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 |
IRF630产品属性
- 类型
描述
- 型号
IRF630
- 功能描述
MOSFET N-Ch 200 Volt 10 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
2020+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
IR |
三年内 |
1983 |
纳立只做原装正品13590203865 |
||||
华晶 |
2013 |
TO-220AB |
999999 |
全新原装进口自己库存优势 |
|||
IR/VISHAY |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
IR |
24+ |
TO220 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
IR |
22+ |
TO-220 |
8900 |
全新正品现货 有挂就有现货 |
|||
IR |
20+ |
SOT263 |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON/IR |
1907+ |
NA |
1600 |
20年老字号,原装优势长期供货 |
|||
IR |
23+ |
TO220 |
20000 |
原厂原装正品现货 |
|||
VISHAY(威世) |
23+ |
TO220AB3 |
6000 |
IRF630规格书下载地址
IRF630参数引脚图相关
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- IRF636
- IRF635
- IRF634SPBF
- IRF634S
- IRF634PBF
- IRF634N
- IRF634B
- IRF634A
- IRF-634
- IRF634
- IRF633
- IRF632
- IRF631
- IRF630STRLPBF
- IRF630SPBF
- IRF630S
- IRF630R
- IRF630PBF
- IRF630NSTRRPBF
- IRF630NSTRLPBF
- IRF630NSPBF
- IRF630NPBF
- IRF630NLPBF
- IRF630N
- IRF630M
- IRF630F
- IRF630B
- IRF630A
- IRF627
- IRF626
- IRF625
- IRF624SPBF
- IRF624S
- IRF624PBF
- IRF624B
- IRF624A
- IRF624
- IRF623
- IRF622
- IRF6218STRLPBF-CUTTAPE
- IRF6218STRLPBF
- IRF6218SHR
- IRF6218PBF
- IRF6218
- IRF6217TRPBF
- IRF6217
- IRF6216TRPBF-CUTTAPE
- IRF6216TRPBF
- IRF6216PBF
- IRF6216
- IRF6215STRRPBF
- IRF6215STRLPBF
- IRF6215SPBF
- IRF6215PBF
- IRF6215LPBF
- IRF6215
- IRF621
- IRF620STRLPBF
- IRF620SPBF
- IRF620S
- IRF620R
- IRF620PBF
- IRF620N
- IRF620B
- IRF620A
- IRF6201TRPBF
- IRF6201PBF
- IRF620
IRF630数据表相关新闻
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2019-3-25
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