位置：首页 > IC中文资料第5503页 > HY57V641620H
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 |  |   | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
64MbSynchronousDRAMbasedon1Mx4Bankx16I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
64MbSynchronousDRAMbasedon1Mx4Bankx16I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
64MbSynchronousDRAMbasedon1Mx4Bankx16I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
64MbSynchronousDRAMbasedon1Mx4Bankx16I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | | |
HY57V641620H产品属性
- 类型
描述
- 型号
HY57V641620H
- 制造商
HYNIX
- 制造商全称
Hynix Semiconductor
- 功能描述
4 Banks x 1M x 16Bit Synchronous DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SKHYNIX |
21+ |
TSOP |
35200 |
一级代理/放心采购 |
|||
HY |
22+23+ |
TSOP |
36980 |
绝对原装正品全新进口深圳现货 |
|||
HYNIX |
TSOP |
68900 |
原包原标签100%进口原装常备现货! |
||||
HY |
07+ |
TSOP56 |
500 |
||||
HY57V641620HGT |
132 |
132 |
|||||
HYNIX |
19+ |
256800 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
||||
HYNIX |
2122+ |
TSOP54 |
12009 |
全新原装正品,优势渠道,价格美丽可做含税 |
|||
HY |
23+ |
TSOP |
5000 |
原装正品,假一罚十 |
|||
HYNIX |
23+ |
SOP |
25500 |
授权代理直销,原厂原装现货,假一罚十,特价销售 |
|||
HYNIX |
22+ |
SOP |
9600 |
原装现货,优势供应,支持实单! |
HY57V641620H芯片相关品牌
HY57V641620H规格书下载地址
HY57V641620H参数引脚图相关
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- HY57V641620HGT-7
- HY57V641620HGT-6I
- HY57V641620HGT-6
- HY57V641620HGT6
- HY57V641620HGT-5I
- HY57V641620HGT-55I
- HY57V641620HGT-55
- HY57V641620HGT-5
- HY57V641620HGLT-8I
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- HY57V641620HGLT-7I
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- HY57V641620HGLT-55
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- HY57V641620HG-I
- HY57V641620HG
- HY57V641620FTP-HIDR-C
- HY57V641620FTP-HI-C
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- HY57V641620ESTP-H
- HY57V641620ESTP-7
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- HY57V641620ESTP-5
- HY57V641620ELTP-H
- HY57V641620ELTP-7
- HY57V641620ELTP-6
- HY57V641620ELTP-5
- HY57V56820HT-8
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- HY4N65D
- HY4N60T
- HY4N60D
- HY4903P
- HY4903B
- HY46XX
- HY4504W
- HY4504P
HY57V641620H数据表相关新闻
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2019-4-21
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