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位置：首页 > IC中文资料第815页 > NE6

NE6价格

参考价格：￥9.1000

型号：NE650R479A-T1 品牌：NEC 备注：这里有NE6多少钱，2024年最近7天走势，今日出价，今日竞价，NE6批发/采购报价，NE6行情走势销售排行榜，NE6报价。
型号 功能描述 生产厂家&企业 LOGO 操作
NE6

包装：散装 描述：CBL CLAMP P-TYPE FASTENER 电缆，电线 - 管理 电缆支撑与紧固件

EssentraEssentra Components

益升华益升华科技股份有限公司

Essentra
NE600

1GHz LNA and mixer

DESCRIPTION TheNE/SA600isacombinedlownoiseamplifier(LNA)andmixerdesignedforhigh-performancelow-powercommunicationsystemsfrom800-120MHz.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
NE600D

1GHz LNA and mixer

DESCRIPTION TheNE/SA600isacombinedlownoiseamplifier(LNA)andmixerdesignedforhigh-performancelow-powercommunicationsystemsfrom800-120MHz.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
NE602A

DOUBLE BALANCED MIXER AND OSCILLATOR

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
NE602AD

DOUBLE BALANCED MIXER AND OSCILLATOR

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
NE602AFE

DOUBLE BALANCED MIXER AND OSCILLATOR

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
NE602AN

DOUBLE BALANCED MIXER AND OSCILLATOR

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
NE604A

High performance low power FM IF system

DESCRIPTION TheNE/SA604Aisanimprovedmonolithiclow-powerFMIFsystemincorporatingtwolimitingintermediatefrequencyamplifiers,quadraturedetector,muting,logarithmicreceivedsignalstrengthindicator,andvoltageregulator.TheNE/SA604AfeatureshigherIFbandwidth(25MHz)andtem

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
NE604N

Ceramic Discriminator for Communications Equipment

1.Smallinsizeandlightweight. 2.Realizenon-adjustmentindetectioncircuit. 3.Highsensitivityandstability. 4.WiderangeofstandardproductsareavailableforvariousICs. 5.Operatingtemperaturerange:Y20DtoW80D Storagetemperaturerange:Y40DtoW85D

MURATA1Murata Manufacturing Co., Ltd

村田村田制作所

MURATA1
NE605

HIGH PERFORMANCE LOW POWER MIXER FM IF SYSTEM

HIGHPERFORMANCELOWPOWERMIXERFMIFSYSTEM

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
NE605

Ceramic Discriminator for Communications Equipment

1.Smallinsizeandlightweight. 2.Realizenon-adjustmentindetectioncircuit. 3.Highsensitivityandstability. 4.WiderangeofstandardproductsareavailableforvariousICs. 5.Operatingtemperaturerange:Y20DtoW80D Storagetemperaturerange:Y40DtoW85D

MURATA1Murata Manufacturing Co., Ltd

村田村田制作所

MURATA1
NE605D

HIGH PERFORMANCE LOW POWER MIXER FM IF SYSTEM

HIGHPERFORMANCELOWPOWERMIXERFMIFSYSTEM

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
NE605DK

HIGH PERFORMANCE LOW POWER MIXER FM IF SYSTEM

HIGHPERFORMANCELOWPOWERMIXERFMIFSYSTEM

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
NE605N

HIGH PERFORMANCE LOW POWER MIXER FM IF SYSTEM

HIGHPERFORMANCELOWPOWERMIXERFMIFSYSTEM

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
NE612

Double-balanced mixer and oscillator

DESCRIPTION TheNE/SA612Aisalow-powerVHFmonolithicdouble-balancedmixerwithon-boardoscillatorandvoltageregulator.Itisintendedforlowcost,lowpowercommunicationsystemswithsignalfrequenciesto500MHzandlocaloscillatorfrequenciesashighas200MHz.Themixerisa“Gilbert

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
NE614A

Low power FM IF system

DESCRIPTION TheNE/SA614Aisanimprovedmonolithiclow-powerFMIFsystemincorporatingtwolimitingintermediatefrequencyamplifiers,quadraturedetector,muting,logarithmicreceivedsignalstrengthindicator,andvoltageregulator.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
NE615

High performance low power mixer FM IF system

HighperformancelowpowermixerFMIFsystem

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
NE64300

NPN MEDIUM POWER MICROWAVE TRANSISTOR

FEATURES ●HIGHOUTPUTPOWER:900mWat2GHz ●HIGHGAIN:11dBat1GHz ●RELIABILITY:Platinum-GoldMetallization

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NE64310

NPN MEDIUM POWER MICROWAVE TRANSISTOR

FEATURES ●HIGHOUTPUTPOWER:900mWat2GHz ●HIGHGAIN:11dBat1GHz ●RELIABILITY:Platinum-GoldMetallization

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NE64320

NPN MEDIUM POWER MICROWAVE TRANSISTOR

FEATURES ●HIGHOUTPUTPOWER:900mWat2GHz ●HIGHGAIN:11dBat1GHz ●RELIABILITY:Platinum-GoldMetallization

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NE645

Dolby Noise Reduction Circuit

DESCRIPTION TheNE645/646isamonolithicaudionoisereductioncircuitdesignedasdirectreplacementdevicefortheNE645B/NE646BinDolby*B-Typenoisereductionsystems.

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1
NE64535

NPN SILICON LOW NOISE RF TRANSISTOR

DESCRIPTION: TheASINE64535isaCommonEmitterDeviceDesignedforLowNoiseClassAAmplifierApplicationsupto4.0GHz. FEATURESINCLUDE: •NF=1.6dBTypical@2GHz •|S21E|2=11dBTypical@2GHz •HermeticCeramicPackage

ASI

Advanced Semiconductor, Inc

ASI
NE645N

Dolby Noise Reduction Circuit

DESCRIPTION TheNE645/646isamonolithicaudionoisereductioncircuitdesignedasdirectreplacementdevicefortheNE645B/NE646BinDolby*B-Typenoisereductionsystems.

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1
NE646

Dolby Noise Reduction Circuit

DESCRIPTION TheNE645/646isamonolithicaudionoisereductioncircuitdesignedasdirectreplacementdevicefortheNE645B/NE646BinDolby*B-Typenoisereductionsystems.

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1
NE646N

Dolby Noise Reduction Circuit

DESCRIPTION TheNE645/646isamonolithicaudionoisereductioncircuitdesignedasdirectreplacementdevicefortheNE645B/NE646BinDolby*B-Typenoisereductionsystems.

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1
NE6500179A

N-CHANNEL GaAs MES FET

1WL-BANDPOWERGaAsMESFET DESCRIPTION TheNE6500179Aisa1WGaAsMESFETdesignedformiddlepowertransmitterapplicationsformobile communicationhandsetandbasestationsystems.Itiscapableofdelivering1Wofoutputpower(CW)withhigh lineargain,highefficiencyandexcelle

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NE6500179A-T1

N-CHANNEL GaAs MES FET

1WL-BANDPOWERGaAsMESFET DESCRIPTION TheNE6500179Aisa1WGaAsMESFETdesignedformiddlepowertransmitterapplicationsformobile communicationhandsetandbasestationsystems.Itiscapableofdelivering1Wofoutputpower(CW)withhigh lineargain,highefficiencyandexcelle

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NE6500278

GaAs MES FET

2.0WL-BAND,S-BANDPOWERGaAsFET N-CHANNELGaAsMESFET DESCRIPTION TheNE6500278isapowerGaAsFETwhichprovideshighgain,highefficiencyandhighoutputpowerinLbandand Sband. FEATURES •ClassABoperation •Highoutputpower:35.5dBm(TYP.) •HighLinearGain:9.0dB(TY

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NE6500278-E3

GaAs MES FET

2.0WL-BAND,S-BANDPOWERGaAsFET N-CHANNELGaAsMESFET DESCRIPTION TheNE6500278isapowerGaAsFETwhichprovideshighgain,highefficiencyandhighoutputpowerinLbandand Sband. FEATURES •ClassABoperation •Highoutputpower:35.5dBm(TYP.) •HighLinearGain:9.0dB(TY

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NE6500379

3W L, S-BAND POWER GaAs MESFET

DESCRIPTION TheNE6500379Aisa3WGaAsMESFETdesignedformiddlepowertransmitterapplicationsformobilecommunicationhandsetandbasestationsystems.Itiscapableofdelivering3wattofoutputpower(CW)withhighlineargain,highefficiencyandexcellentdistortion.Reliabilityandper

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NE6500379A

3W L, S-BAND POWER GaAs MESFET

DESCRIPTION TheNE6500379Aisa3WGaAsMESFETdesignedformiddlepowertransmitterapplicationsformobilecommunicationhandsetandbasestationsystems.Itiscapableofdelivering3wattofoutputpower(CW)withhighlineargain,highefficiencyandexcellentdistortion.Reliabilityandper

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NE6500379A

3W, L/S-BAND MEDIUM POWER GaAs MESFET

DESCRIPTION NECsNE6500379Aisa3WGaAsMESFETdesignedformediumpowerFixedWirelessAccess,ISM,WLL,PCS,IMT-2000,andreturnpathMMDStransmitterapplications.Itiscapableofdelivering3Wattsofoutputpowerwithhighlineargain,highefficiencyandexcellentlinearity.Reliability

CEL

California Eastern Laboratories

CEL
NE6500379A

N-CHANNEL GaAs MES FET

N-CHANNELGaAsMESFET DESCRIPTION TheNE6500379Aisa3WGaAsMESFETdesignedformiddlepowertransmitterapplicationsformobile communicationhandsetandbasestationsystems.Itiscapableofdelivering3wattofoutputpower(CW)withhigh lineargain,highefficiencyandexcellentdis

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NE6500379A-T1

3W L, S-BAND POWER GaAs MESFET

DESCRIPTION TheNE6500379Aisa3WGaAsMESFETdesignedformiddlepowertransmitterapplicationsformobilecommunicationhandsetandbasestationsystems.Itiscapableofdelivering3wattofoutputpower(CW)withhighlineargain,highefficiencyandexcellentdistortion.Reliabilityandper

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NE6500379A-T1

3W, L/S-BAND MEDIUM POWER GaAs MESFET

DESCRIPTION NECsNE6500379Aisa3WGaAsMESFETdesignedformediumpowerFixedWirelessAccess,ISM,WLL,PCS,IMT-2000,andreturnpathMMDStransmitterapplications.Itiscapableofdelivering3Wattsofoutputpowerwithhighlineargain,highefficiencyandexcellentlinearity.Reliability

CEL

California Eastern Laboratories

CEL
NE6500379A-T1

N-CHANNEL GaAs MES FET

N-CHANNELGaAsMESFET DESCRIPTION TheNE6500379Aisa3WGaAsMESFETdesignedformiddlepowertransmitterapplicationsformobile communicationhandsetandbasestationsystems.Itiscapableofdelivering3wattofoutputpower(CW)withhigh lineargain,highefficiencyandexcellentdis

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NE6500496

4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NE6500496

GaAs MES FET

4WL,S-BANDPOWERGaAsFET N-CHANNELGaAsMESFET DESCRIPTION TheNE6500496ispowerGaAsFETwhichprovideshigh gain,highefficiencyandhighoutputpowerinL,Sband. Toreducethermalresistance,thedevicehasaPHS (PlatedHeatSink)structure. FEATURES •ClassAoperation •H

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NE6500496_00

L&S BAND MEDIUM POWER GaAs MESFET

DESCRIPTION TheNE6500496isamediumpowerGaAsMESFETdesignedforuptoa4Woutputstageorasadriverforhighpowerdevices.ThedevicehasnointernalmatchingandcanbeusedfromUHFfrequenciesupto3.0GHz.Thechipsusedinthisseriesoffersuperiorreliabilityandconsistentperf

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NE650103M

N-CHANNEL GaAs MES FET

10WL,S-BANDPOWERGaAsMESFET DESCRIPTION TheNE650103Misa10WGaAsMESFETdesignedforpowertransmitterapplicationsformobilecommunication basestationsystems.Itiscapableofdelivering10Wofoutputpower(CW)withhighlineargain,highefficiencyand lowdistortion. Reli

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NE650103M-A

N-CHANNEL GaAs MES FET

10WL,S-BANDPOWERGaAsMESFET DESCRIPTION TheNE650103Misa10WGaAsMESFETdesignedforpowertransmitterapplicationsformobilecommunication basestationsystems.Itiscapableofdelivering10Wofoutputpower(CW)withhighlineargain,highefficiencyand lowdistortion. Reli

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NE6501077

10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NE6501077

GaAs MES FET

10WL,S-BANDPOWERGaAsFET N-CHANNELGaAsMESFET DESCRIPTION TheNE6501077ispowerGaAsFETwhichprovides highgain,highefficiencyandhighoutputpowerinL,Sband. Toreducethermalresistance,thedevicehasaPHS (PlatedHeatSink)structure. FEATURES •ClassAoperation •H

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NE6501077_00

L/S BAND MEDIUM POWER GaAs MESFET

DESCRIPTION TheNE6501077isamediumpowerGaAsMESFETdesignedforuptoa10Woutputstageorasadriverforhighpowerdevices.ThedevicehasnointernalmatchingandcanbeusedfromUHFfrequenciesupto3.0GHz.Thechipsusedinthisseriesoffersuperiorreliabilityandconsistentper

CEL

California Eastern Laboratories

CEL
NE650R279A

0.2 W L, S-BAND POWER GaAs MES FET

DESCRIPTION TheNE650R279Aisa0.2WGaAsMESFETdesignedformiddlepowertransmitterapplicationsformobilecommunicationhandsetandbasestationsystems.Itiscapableofdelivering0.2wattofoutputpower(CW)withhighlineargain,highefficiency,excellentdistortionandissuitablea

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NE650R279A

N-CHANNEL GaAs MES FET

0.2WL,S-BANDPOWERGaAsMESFET DESCRIPTION TheNE650R279Aisa0.2WGaAsMESFETdesignedformiddlepowertransmitterapplicationsformobile communicationhandsetandbasestationsystems.Itiscapableofdelivering0.2wattofoutputpower(CW)withhigh lineargain,highefficiency

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NE650R279A-T1

0.2 W L, S-BAND POWER GaAs MES FET

DESCRIPTION TheNE650R279Aisa0.2WGaAsMESFETdesignedformiddlepowertransmitterapplicationsformobilecommunicationhandsetandbasestationsystems.Itiscapableofdelivering0.2wattofoutputpower(CW)withhighlineargain,highefficiency,excellentdistortionandissuitablea

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NE650R279A-T1

N-CHANNEL GaAs MES FET

0.2WL,S-BANDPOWERGaAsMESFET DESCRIPTION TheNE650R279Aisa0.2WGaAsMESFETdesignedformiddlepowertransmitterapplicationsformobile communicationhandsetandbasestationsystems.Itiscapableofdelivering0.2wattofoutputpower(CW)withhigh lineargain,highefficiency

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NE650R479A

0.4 W L, S-BAND POWER GaAs MES FET

DESCRIPTION TheNE650R479Aisa0.4WGaAsMESFETdesignedformiddlepowertransmitterapplicationsformobilecommunicationhandsetandbasestationsystems.Itiscapableofdelivering0.4wattofoutputpower(CW)withhighlineargain,highefficiency,excellentdistortionandissuitablea

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NE650R479A

N-CHANNEL GaAs MES FET

0.4WL,S-BANDPOWERGaAsMESFET DESCRIPTION TheNE650R479Aisa0.4WGaAsMESFETdesignedformiddlepowertransmitterapplicationsformobile communicationhandsetandbasestationsystems.Itiscapableofdelivering0.4wattofoutputpower(CW)withhighlineargain,highefficiency,e

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NE650R479A-T1

0.4 W L, S-BAND POWER GaAs MES FET

DESCRIPTION TheNE650R479Aisa0.4WGaAsMESFETdesignedformiddlepowertransmitterapplicationsformobilecommunicationhandsetandbasestationsystems.Itiscapableofdelivering0.4wattofoutputpower(CW)withhighlineargain,highefficiency,excellentdistortionandissuitablea

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NE650R479A-T1

N-CHANNEL GaAs MES FET

0.4WL,S-BANDPOWERGaAsMESFET DESCRIPTION TheNE650R479Aisa0.4WGaAsMESFETdesignedformiddlepowertransmitterapplicationsformobile communicationhandsetandbasestationsystems.Itiscapableofdelivering0.4wattofoutputpower(CW)withhighlineargain,highefficiency,e

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NE6510179

NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

DESCRIPTION NECsNE6510179AisaGaAsHJ-FETdesignedformediumpowermobilecommunications,FixedWirelessAccess,ISM,WLL,PCS,IMT-2000,andMMDStransmitterandsubscriberapplications.Itiscapableofdelivering1.8wattsofoutputpower(C/W)at3.5Vand3Wattsofouptutpower(CW)at5

CEL

California Eastern Laboratories

CEL
NE6510179A

NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

DESCRIPTION NECsNE6510179AisaGaAsHJ-FETdesignedformediumpowermobilecommunications,FixedWirelessAccess,ISM,WLL,PCS,IMT-2000,andMMDStransmitterandsubscriberapplications.Itiscapableofdelivering1.8wattsofoutputpower(C/W)at3.5Vand3Wattsofouptutpower(CW)at5

CEL

California Eastern Laboratories

CEL
NE6510179A

N-CHANNEL GaAs HJ-FET

1WL-BANDPOWERGaAsHJ-FET DESCRIPTION TheNE6510179Aisa1WGaAsHJ-FETdesignedformiddlepowertransmitterapplicationsformobile communicationandwirelessPCLANsystems.Itiscapableofdelivering1Wofoutputpower(CW)withhighlinear gain,highefficiencyandexcellentdist

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NE6510179A-A

NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

DESCRIPTION NECsNE6510179AisaGaAsHJ-FETdesignedformediumpowermobilecommunications,FixedWirelessAccess,ISM,WLL,PCS,IMT-2000,andMMDStransmitterandsubscriberapplications.Itiscapableofdelivering1.8wattsofoutputpower(C/W)at3.5Vand3Wattsofouptutpower(CW)at5

CEL

California Eastern Laboratories

CEL
NE6510179A-T1

NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

DESCRIPTION NECsNE6510179AisaGaAsHJ-FETdesignedformediumpowermobilecommunications,FixedWirelessAccess,ISM,WLL,PCS,IMT-2000,andMMDStransmitterandsubscriberapplications.Itiscapableofdelivering1.8wattsofoutputpower(C/W)at3.5Vand3Wattsofouptutpower(CW)at5

CEL

California Eastern Laboratories

CEL
NE6510179A-T1

N-CHANNEL GaAs HJ-FET

1WL-BANDPOWERGaAsHJ-FET DESCRIPTION TheNE6510179Aisa1WGaAsHJ-FETdesignedformiddlepowertransmitterapplicationsformobile communicationandwirelessPCLANsystems.Itiscapableofdelivering1Wofoutputpower(CW)withhighlinear gain,highefficiencyandexcellentdist

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NE6510179A-T1-A

NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

DESCRIPTION NECsNE6510179AisaGaAsHJ-FETdesignedformediumpowermobilecommunications,FixedWirelessAccess,ISM,WLL,PCS,IMT-2000,andMMDStransmitterandsubscriberapplications.Itiscapableofdelivering1.8wattsofoutputpower(C/W)at3.5Vand3Wattsofouptutpower(CW)at5

CEL

California Eastern Laboratories

CEL
NE6510379A

3 W L-BAND POWER GaAs HJ-FET

DESCRIPTION TheNE6510379Aisa3WGaAsHJ-FETdesignedformiddlepowertransmitterapplicationsformobilecommunicationsystems.Itiscapableofdelivering3wattofoutputpower(1/3Dutypulseoperation)withhighlineargain,highefficiencyandexcellentdistortion. Reliabilityandperf

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
替换型号 功能描述 生产厂家&企业 LOGO 操作
NTE2004

Integrated Circuit Dolby Noise Reduction Circuit

NTENTE Electronics, Inc

NTE

NE6产品属性

  • 类型

    描述

  • 型号

    NE6

  • 功能描述

    CLAMP VINYL-DIPPED 7/16X3/8

  • RoHS

    是

  • 类别

    线缆，导线 - 管理 >> 线夹和夹具

  • 系列

    NE

  • 标准包装

    100

  • 系列

    TC

  • 类型

    C-夹

  • 开口尺寸

    0.79 L x 0.54 W x 0.67 H（20.1mm x 13.7mm x 17.0mm）

  • 安装类型

    钉子

  • 材质

    聚丙烯

  • 颜色

    黑

NE6供应商更多...

更新时间：2024-5-12 21:27:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳诚思涵科技有限公司
ne602
PHILIPS
22+
DIP8
8000
只做原装正品现货
询价
深圳市科芯源微电子有限公司
NE68518
RENESAS/瑞萨
23+
SOT-343
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
瀚佳科技(深圳)有限公司
NE602
PHILIPS
2020+
DIP-8
16800
绝对原装进口现货,假一赔十,价格优势!?
询价
深圳市汇莱威科技有限公司
NE688M03
RENESAS/瑞萨
SOT423
7906200
询价
深圳市坤融电子科技有限公司
NE602N
S
2024+实力库存
DIP-8
300
只做原厂渠道 可追溯货源
询价
深圳市金华微盛电子有限公司
NE645N
PHILIPS
19+
DIP
15868
询价
深圳市鸿昌盛电子科技有限公司
NE602
2015+
400
公司现货库存
询价
深圳市特顺芯科技有限公司
NE600D
3000
公司存货
询价
深圳市勤思达科技有限公司
NE602A
PHILIPS
23+
SOP8
88000
现货库存,全新原装,特价销售
询价
深圳市芯祺盛科技有限公司
NE602A
NXP/恩智浦
1904+
SOP8
3500
自家现货!原装特价供货!一片起卖!
询价

NE6芯片相关品牌

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  • ISSI
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  • Micrel
  • PEAK
  • pulse
  • SEMITECH
  • SEMTECH_ELEC
  • SPSEMI
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  • NE5568-交换式电源控制器

    描述该NE5568是一个使用的开关式电源控制电路供应。它包含一个内部温度补偿的供应，脉宽调制，锯齿振荡器，过电流检测锁存和输出阶段。该装置适用于低成本开关电源的应用场合广泛的看家功能不是必需的。是的NE5568作者：NE5561所选版本。特征•微小型（四）包•脉宽调制器•电流限制（按周期循环）•锯齿波发生器•稳压电源•双脉冲防护•内部温度补偿基准

    2013-3-7

  • NE57811-先进的DDR内存，关闭终端电源

    描述NE57811目的是提供一个终止的权力双数据速率（DDR）SDRAM内存总线。它显着减少元件数量，电路板空间和整体系统成本比以前的解决方案。NE57811DDR终端稳压器维持输出RAM的电压（DDR参考总线电压）的一半，电源电压。它是能够提供高达±3.5一个持续时期。过流限制保护从浪涌NE57811启动电流和过热关断保护在极端温度情况下的设备。SPAK-5（SOT756）包热强大的灵活性散热设计。由于NE57811是一个线性稳压器，没有外部电感器或开关场效应管是必要的。响应速度快负载的变化，降低输出电容器的需求。特点

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  • NE56631-30D-低有效的系统复位

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